VLSI electronics : microstructure science, volume 7 /

VLSI Electronics Microstructure Science.

Detalles Bibliográficos
Clasificación:Libro Electrónico
Otros Autores: Einspruch, Norman G.
Formato: Electrónico eBook
Idioma:Inglés
Publicado: New York : Academic Press, 1983.
Colección:VLSI Electronics Microstructure Science.
Temas:
Integrated circuits > Very large scale integration.
Circuits int�egr�es �a tr�es grande �echelle.
Integrated circuits > Very large scale integration
Acceso en línea:Texto completo
Texto completo
Tabla de Contenidos:
  • Front Cover; VLSI Electronics Microstructure Science; Copyright Page; Table of Contents; List of Contributors; Preface; Chapter 1. Advanced Manufacturing Equipment for VLSI Lithography; I. INTRODUCTION; II. THE NATURE OF THE LITHOGRAPHIC PROCESS; III. OPTICAL LITHOGRAPHY; IV. ELECTRON-BEAM MICROLITHOGRAPHY; V. X-RAY LITHOGRAPHY; VI. HYBRID LITHOGRAPHY; VII. UPDATED POSITION; VIII. OTHER CONSIDERATIONS; IX. FUTURE MICROLITHOGRAPHIC SYSTEMS AND THEIR RELATION TO THE FACTORY OF THE FUTURE; X. SUMMARY AND CONCLUSION; ACKNOWLEDGMENTS; REFERENCES
  • Chapter 2. Scaled MOS and Bipolar Technologies for VLSII. INTRODUCTION; II. GENERIC PROCESSES FOR MOS AND BIPOLAR VLSI; III. MOS SCALING AND TECHNOLOGY IMPLEMENTATION; IV. BIPOLAR SCALING AND TECHNOLOGY IMPLEMENTATION; V. CONCLUSION; ACKNOWLEDGMENTS; REFERENCES; Chapter 3. Laser Direct Writing for VLSI; I. INTRODUCTION; II. INSTRUMENTATION FOR LASER DIRECT WRITING; III. LASER ETCHING; IV. LASER DEPOSITION; V. LASER DOPING; VI. APPLICATIONS; VII. SUMMARY AND FUTURE DIRECTIONS; ACKNOWLEDGMENTS; REFERENCES; Chapter 4. Ultrathin-Gate Dielectric Processes for VLSI Applications; I. INTRODUCTION
  • II. GROWTH OF THIN OXIDESIII. CHARACTERISTICS AND CHARACTERIZATION OF THIN OXIDES; IV. PROCESS-RELATED ISSUES; V. THIN OXIDES RELATED TO DEVICES; VI. CASE FOR ALTERNATIVE DIELECTRICS; REFERENCES; Chapter 5. Limits to Improvement of Silicon Integrated Circuits; I. PREFATORY REMARKS; II. INTRODUCTION; III. PHYSICAL LIMITS; IV. TECHNOLOGICAL LIMITS; V. COMPLEXITY LIMITS; VI. SUMMARY; ACKNOWLEDGMENTS; REFERENCES; Chapter 6. Noise in VLSI; I. INTRODUCTION; II. NOISE SOURCES IN VLSI; III. NOISE OUTPUT OF VLSI BUILDING BLOCKS; IV. CROSS TALK
  • Chapter 9. Integrated Superconducting ElectronicsI. INTRODUCTION; II. ORIGIN OF TECHNOLOGY; III. DIGITAL DEVICES; IV. STRUCTURE AND FABRICATION; V. SPEED CONSIDERATIONS; VI. SUMMARY AND DISCUSSION; ACKNOWLEDGMENTS; REFERENCES; Index; Contents of Other Volumes

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