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The physics of MOS insulators : proceedings of the International Topical Conference on the Physics of MOS Insulators, held at the Jane S. McKimmon Conference Center, North Carolina State University Raleigh, North Carolina, June 18-20, 1980 /
The Physics of MOS Insulators focuses on the experiments, research, and discussions made on MOS insulators. Divided into eight parts and having 72 chapters, the selection features the lengthy literature of contributors in the field of biochemistry who have continuously worked to highlight the struct...
| Clasificación: | Libro Electrónico |
|---|---|
| Autor Corporativo: | |
| Otros Autores: | , , |
| Formato: | Electrónico Congresos, conferencias eBook |
| Idioma: | Inglés |
| Publicado: |
New York :
Pergamon Press,
�1980.
|
| Temas: | |
| Acceso en línea: | Texto completo |
MARC
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| 111 | 2 | |a International Topical Conference on the Physics of MOS Insulators |d (1980 : |c North Carolina State University) | |
| 245 | 1 | 4 | |a The physics of MOS insulators : |b proceedings of the International Topical Conference on the Physics of MOS Insulators, held at the Jane S. McKimmon Conference Center, North Carolina State University Raleigh, North Carolina, June 18-20, 1980 / |c editors, Gerald Lucovsky, Sokrates T. Pantelides, Frank L. Galeener. |
| 260 | |a New York : |b Pergamon Press, |c �1980. | ||
| 300 | |a 1 online resource (xi, 369 pages) : |b illustrations | ||
| 336 | |a text |b txt |2 rdacontent | ||
| 337 | |a computer |b c |2 rdamedia | ||
| 338 | |a online resource |b cr |2 rdacarrier | ||
| 504 | |a Includes bibliographical references and index. | ||
| 506 | |3 Use copy |f Restrictions unspecified |2 star |5 MiAaHDL | ||
| 533 | |a Electronic reproduction. |b [Place of publication not identified] : |c HathiTrust Digital Library, |d 2010. |5 MiAaHDL | ||
| 538 | |a Master and use copy. Digital master created according to Benchmark for Faithful Digital Reproductions of Monographs and Serials, Version 1. Digital Library Federation, December 2002. |u http://purl.oclc.org/DLF/benchrepro0212 |5 MiAaHDL | ||
| 583 | 1 | |a digitized |c 2010 |h HathiTrust Digital Library |l committed to preserve |2 pda |5 MiAaHDL | |
| 588 | 0 | |a Print version record. | |
| 505 | 0 | |a Front Cover; The Physics of Mos Insulators; Copyright Page; FOREWORD; Table of Contents; PART I: TRANSPORT PROPERTIES; CHAPTER 1. HIGH CURRENT INJECTION INTO Si02 USING Si-RICH Si02 FILMSAND EXPERIMENTAL APPLICATIONS; ABSTRACT; I. INTRODUCTION; II. PHYSICS AND MATERIAL CONSIDERATIONS; III. EXPERIMENTAL APPLICATIONS; IV. CONCLUSIONS; ACKNOWLEDGEMENTS; REFERENCES; CHAPTER 2. HIGH FIELD CONDUCTION IN THICK OXIDE MNOS CAPACITORS ONP-TYPE SILICON; ABSTRACT; INTRODUCTION; SAMPLES AND MEASUREMENTS; OBSERVATIONS IN THE INVERSION MODE; ABSTRACT; INTRODUCTION; SAMPLES AND MEASUREMENTS. | |
| 505 | 8 | |a OBSERVATIONS IN THE INVERSION MODEOBSERVATIONS IN THE ACCUMULATION MODE; OBSERVATIONS IN THE ACCUMULATION MODE; REFERENCES; REFERENCES; CHAPTER 3. DIELECTRIC BREAKDOWN IN THERMAL Si02 GROWN FROM DOPEDPOLY CRYSTALLINE SILICON THIN FILMS; INTRODUCTION; SAMPLE PREPARATION AND MEASUREMENT PROCEDURE; CHAPTER 6. DIELECTRIC BREAKDOWN IN THERMAL Si02 GROWN FROM DOPEDPOLY CRYSTALLINE SILICON THIN FILMS; INTRODUCTION; SAMPLE PREPARATION AND MEASUREMENT PROCEDURE; RESULTS AND DISCUSSION; RESULTS AND DISCUSSION; REFERENCES; REFERENCES. | |
| 505 | 8 | |a CHAPTER 4. THE EFFECT OF DIFFUSION ON THE PHOTOCONDUCTIVITY OF THIN FILMSABSTRACT; INTRODUCTION; PHOTOCONDUCTIVITY EQUATIONS; CHAPTER 7. THE EFFECT OF DIFFUSION ON THE PHOTOCONDUCTIVITY OF THIN FILMS; ABSTRACT; INTRODUCTION; PHOTOCONDUCTIVITY EQUATIONS; NUMERICAL SOLUTION; DISCUSSION; NUMERICAL SOLUTION; DISCUSSION; REFERENCES; REFERENCES; CHAPTER 5. THE KINETIC BEHAVIOUR OF MOBILE IONS IN Si02 STUDIED WITHTSIC AND TVS MEASUREMENTS; CHAPTER 8. THE KINETIC BEHAVIOUR OF MOBILE IONS IN Si02 STUDIED WITHTSIC AND TVS MEASUREMENTS; ABSTRACI; INTRODUCTION. | |
| 505 | 8 | |a THE TRAPPING ENERGY LEVELS OF MOBILE IONS AT POLY Si/Si02AND Si02/Si INTERFACES MEASURED WITH TSICDIRECT CALCULATING METHOD ABOUT INITIAL ENERGY DISTRIBUTIONOF MOBILE IONS AMONG THE INTERFACE TRAPPING STATES; DISCUSSION; ACKNOWLEDGMENT; REFERENCES; CHAPTER 9. INTERACTIONS BETWEEN SMALL-POLARONIC PARTICLES IN SOLIDS; ABSTRACT; INTRODUCTION; APPROACH; EQUIVALENT INTERSTITIALS; ELECTRON-HOLE INTERACTIONS; REFERENCES; CHAPTER 10. SMALL POLARON HOPPING WITHOUT TRAP PARTICIPATION IN DISPERSIVETRANSIENT TRANSPORT IN Si02 OF MOS STRUCTURES; ABSTRACT; REFERENCES. | |
| 505 | 8 | |a CHAPTER 11. ELECTRON TRANSPORT IN Si02 FILMS AT LOW TEMPERATURES*ABSTRACT; INTRODUCTION; EXPERIMENTAL PROCEDURE AND RESULTS; DISCUSSION; REFERENCES; CHAPTER 12. PHYSICAL EFFECTS IN LATERAL MIS STRUCTURES WITH ULTRATHINOXIDES; ABSTRACT; INTRODUCTION; EXPERIMENTAL; RESULTS; SOME APPLICATIONS OF THE LATERAL MIS TUNNEL STRUCTURES; SUMMARY; REFERENCES; CHAPTER 13. OXYGEN AS A TWO-LEVEL TUNNELING SYSTEM IN SiO2; ABSTRACT; INTRODUCTION; THEORY AND MODELS; PRESENT WORK; CONCLUSIONS; ACKNOWLEDGEMENT; REFERENCES; PART II: BULK PROPERTIES. | |
| 520 | |a The Physics of MOS Insulators focuses on the experiments, research, and discussions made on MOS insulators. Divided into eight parts and having 72 chapters, the selection features the lengthy literature of contributors in the field of biochemistry who have continuously worked to highlight the structure, properties, applications, processes, experiments, and research done on MOS insulators. Scattered within the numerous chapters of the selection are experiments that are supported by lengthy discussions and data necessary to validate the claims of the authors. Although the chapters cover differe. | ||
| 650 | 0 | |a Metal oxide semiconductors |v Congresses. | |
| 650 | 0 | |a Metal insulator semiconductors |v Congresses. | |
| 650 | 6 | |a MOS (�Electronique) |0 (CaQQLa)201-0032323 |v Congr�es. |0 (CaQQLa)201-0378219 | |
| 650 | 6 | |a MIS (�Electronique) |0 (CaQQLa)201-0284710 |v Congr�es. |0 (CaQQLa)201-0378219 | |
| 650 | 7 | |a SCIENCE |x Physics |x Electricity. |2 bisacsh | |
| 650 | 7 | |a SCIENCE |x Physics |x Electromagnetism. |2 bisacsh | |
| 650 | 7 | |a Metal insulator semiconductors. |2 fast |0 (OCoLC)fst01017601 | |
| 650 | 7 | |a Metal oxide semiconductors. |2 fast |0 (OCoLC)fst01017624 | |
| 655 | 2 | |a Congress |0 (DNLM)D016423 | |
| 655 | 7 | |a Conference papers and proceedings. |2 fast |0 (OCoLC)fst01423772 | |
| 655 | 7 | |a Conference papers and proceedings. |2 lcgft | |
| 655 | 7 | |a Actes de congr�es. |2 rvmgf |0 (CaQQLa)RVMGF-000001049 | |
| 700 | 1 | |a Lucovsky, G. | |
| 700 | 1 | |a Pantelides, Sokrates T. | |
| 700 | 1 | |a Galeener, F. L. | |
| 776 | 0 | 8 | |i Print version: |a International Topical Conference on the Physics of MOS Insulators (1980 : North Carolina State University). |t Physics of MOS insulators. |d New York : Pergamon Press, �1980 |w (DLC) 80022281 |w (OCoLC)6735731 |
| 856 | 4 | 0 | |u https://sciencedirect.uam.elogim.com/science/book/9780080259697 |z Texto completo |