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Wide-band-gap semiconductors : proceedings of the Seventh Trieste ICTP-IUPAP Semiconductor Symposium, International Centre for Theoretical Physics, Trieste, Italy, 8-12 June 1992 /
Wide-band-gap semiconductors have been a research topic for many decades. However, it is only in recent years that the promise for technological applications came to be realized; simultaneously an upsurge of experimental and theoretical activity in the field has been witnessed. Semiconductors with w...
| Clasificación: | Libro Electrónico |
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| Autor Corporativo: | |
| Otros Autores: | |
| Formato: | Electrónico Congresos, conferencias eBook |
| Idioma: | Inglés |
| Publicado: |
Amsterdam : New York :
North-Holland ; Sole distributors for the USA and Canada, Elsevier Science Pub. Co.,
1993.
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| Temas: | |
| Acceso en línea: | Texto completo |
Tabla de Contenidos:
- Front Cover; Copyright Page; Wide-band-gap Semiconductors; Conference photograph; Preface; Introduction; Table of Contents; Chapter 1. General reviews; Thin films and devices of diamond, silicon carbide and gallium nitride; Optical physics and laser devices in II-VI quantum confined heterostructures; Blue-green II-VI laser diodes; Chapter 2. Growth; Growth of GaN by ECR-assisted MBE; Ar ion laser-assisted metalorganic vapor phase epitaxy of ZnSe; Progress in epitaxial growth of SiC; CVD growth and characterization of single-crystalline 6H silicon carbide
- Influence of temperature on the formation by reactive CVD of a silicon carbide buffer layer on siliconA model for the buffer layer formed on silicon during HFCVD diamond growth; Growth of diamond films from microwave plasma in CH4- CO2 mixtures; Early stages of nucleation and growth of diamond film by AES, SEM, UPS and optical reflectivity techniques: Surface composition; Crystal growth of III-N compounds under high nitrogen pressure; Substrate-quality, single-crystal ZnSe for homoepitaxy using seeded physical vapor transport; MOVPE-growth and physics of ZnSe-ZnTe superlattices
- Chapter 3. DopingZnSe-based laser diodes and p-type doping of ZnSe; Doping limits in ZnSe; Self-compensation in nitrogen-doped ZnSe; Residual defect control when doping thin layers in diamond; Impurity incorporation and doping of diamond; Microscopic characterization of heavy-ion implanted diamond; Pseudopotential total-energy calculations of column-V acceptors in ZnSe; New acceptor-related compensation mechanisms in wide band gap semiconductors; Low-temperature MBE growth of p-type ZnSe using UV laser irradiation; Resonant photoluminescence measurements in As- and P-doped ZnTe epilayers
- Gallium and nitrogen ion implantation in MOVPE-grown ZnSe/GaAsChapter 4. Defects and impurities; Theory of impurities in diamond; Defects, optical absorption and electron mobility in indium and gallium nitrides; Point defects in silicon carbide; Annealing behaviour of In impurities in SiC after ion implantation; Formation of macrodefects in SiC; Hydrogen in polycrystalline diamond; The 2.96 eV centre in diamond; Study of defects in wide band gap semiconductors by electron paramagnetic resonance; Site-selective study of picosecond relaxation processes of Ni2+ in polymorphic ZnS
- Magneto-optics of Cu-related defects in polymorphic ZnSCenters of radiative and nonradiative recombination in isoelectronically doped ZnSe:Te crystals; Luminescence from structural defects in heteroepitaxial MOVPE-grown ZnTe; Intracenter transitions of transition metal impurities in II-VI semiconductors; PAD-investigations on MnS cluster formation within the diluted magnetic semiconductor ZnMnS; Chapter 5. Characterization; Electrical and optical characterization of SiC; Intrinsic and extrinsic absorption and luminescence in diamond