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Lightwave communications technology. Part A, Material growth technologies /
SEMICONDUCTORS & SEMIMETALS V22.
| Clasificación: | Libro Electrónico |
|---|---|
| Otros Autores: | |
| Formato: | Electrónico eBook |
| Idioma: | Inglés |
| Publicado: |
Orlando, Fla. :
Academic Press,
1985.
|
| Colección: | Semiconductors and semimetals ;
v. 22A, pt. A. |
| Temas: | |
| Acceso en línea: | Texto completo Texto completo |
Tabla de Contenidos:
- Front Cover; Lightwave Communications Technology; Copyright Page; Contents; List of Contributors; Treatise Foreword; Foreword; Preface; Chapter 1. The Liquid-Phase Epitaxial Growth of InGaAsP; I. Introduction; II. In-Ga-As-P and In-Ga-As Phase Diagrams; III. Growth of Lattice-Matched InGaAsP and InGaAs Layers; IV. Growth of Misfit-Dislocation-Free Wafers; V. Growth Rate; VI. Growth of High-Purity Epitaxial Layers; VII. Other Features of the Growth; VIII. Direct Growth of InP on (111)A In0.53Ga0.47As; IX. Concluding Comments; References
- Chapter 2. Molecular Beam Epitaxy for III-V Compound SemiconductorsI. Historical Background of Molecular Beam Epitaxy; II. The Basic Molecular Beam Epitaxy Process; III. Growth Apparatus; IV. In Situ Surface Diagnostic Techniques; V. Substrate Preparation; VI. Growth Conditions for Ill-V Compounds; VII. Transport and Optical Properties of Single Layers; VIII. Transport and Optical Properties of Quantum Well Structures; IX. MBE-Grown III-V Semiconductor Lasers; X. Novel Laser Structures; XI . Novel Photodetectors; XII. Concluding Remarks; References
- Chapter 3. Organometallic Vapor-Phase Epitaxial Growth of III-V SemiconductorsI. Introduction; II. Growth Process; III. Specific Materials and Devices; IV. Summary and Future Directions; References; Chapter 4. Halide and Chloride Transport Vapor-Phase Deposition of InGaAsP and GaAs; I. Introduction; II. Halide Transport; III. Thermodynamic Model; IV. Aspects of the Growth Mechanisms; V. Conclusion; Appendix; References; Chapter 5. Low-Pressure Metallo-Organic Chemical Vapor Deposition of GaxIn1-xAsyP1-y Alloys; I. Introduction; II. Growth Technique; III. Growth and Characterization of InP
- IV. Growth and characterization of GaInAsV. Growth and Characterization of GaInAsP; VI. Conclusion; References; Chapter 6. Defects in III
- V Compound Semiconductors; I. Introduction; II. Native and Process-Induced Defects in Optoelectronic Materials; III. Electronic Properties of Dislocations; IV. Degradation-Induced Defects; V. Conclusion; References; Index; Contents of Volume 22; Contents of Previous Volumes