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Lightwave communications technology. Part A, Material growth technologies /
SEMICONDUCTORS & SEMIMETALS V22.
| Clasificación: | Libro Electrónico |
|---|---|
| Otros Autores: | |
| Formato: | Electrónico eBook |
| Idioma: | Inglés |
| Publicado: |
Orlando, Fla. :
Academic Press,
1985.
|
| Colección: | Semiconductors and semimetals ;
v. 22A, pt. A. |
| Temas: | |
| Acceso en línea: | Texto completo Texto completo |
MARC
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| 008 | 090601s1985 flua ob 001 0 eng d | ||
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| 019 | |a 1086518753 |a 1162263617 |a 1181950826 | ||
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| 020 | |a 9780127521220 |q (electronic bk.) | ||
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| 020 | |z 9780080864150 | ||
| 035 | |a (OCoLC)646756783 |z (OCoLC)1086518753 |z (OCoLC)1162263617 |z (OCoLC)1181950826 | ||
| 050 | 4 | |a QC610.9 |b .S4822A 1985eb | |
| 082 | 0 | 4 | |a 621.382 |2 23 |
| 245 | 0 | 0 | |a Lightwave communications technology. |n Part A, |p Material growth technologies / |c volume editor, W.T. Tsang. |
| 246 | 3 | |a Material growth technologies | |
| 260 | |a Orlando, Fla. : |b Academic Press, |c 1985. | ||
| 300 | |a 1 online resource (xix, 416 pages) : |b illustrations | ||
| 336 | |a text |b txt |2 rdacontent | ||
| 337 | |a computer |b c |2 rdamedia | ||
| 338 | |a online resource |b cr |2 rdacarrier | ||
| 490 | 1 | |a Semiconductors and semimetals ; |v v. 22A, pt. A | |
| 504 | |a Includes bibliographical references and indexes. | ||
| 588 | 0 | |a Print version record. | |
| 505 | 0 | |a Front Cover; Lightwave Communications Technology; Copyright Page; Contents; List of Contributors; Treatise Foreword; Foreword; Preface; Chapter 1. The Liquid-Phase Epitaxial Growth of InGaAsP; I. Introduction; II. In-Ga-As-P and In-Ga-As Phase Diagrams; III. Growth of Lattice-Matched InGaAsP and InGaAs Layers; IV. Growth of Misfit-Dislocation-Free Wafers; V. Growth Rate; VI. Growth of High-Purity Epitaxial Layers; VII. Other Features of the Growth; VIII. Direct Growth of InP on (111)A In0.53Ga0.47As; IX. Concluding Comments; References | |
| 505 | 8 | |a Chapter 2. Molecular Beam Epitaxy for III-V Compound SemiconductorsI. Historical Background of Molecular Beam Epitaxy; II. The Basic Molecular Beam Epitaxy Process; III. Growth Apparatus; IV. In Situ Surface Diagnostic Techniques; V. Substrate Preparation; VI. Growth Conditions for Ill-V Compounds; VII. Transport and Optical Properties of Single Layers; VIII. Transport and Optical Properties of Quantum Well Structures; IX. MBE-Grown III-V Semiconductor Lasers; X. Novel Laser Structures; XI . Novel Photodetectors; XII. Concluding Remarks; References | |
| 505 | 8 | |a Chapter 3. Organometallic Vapor-Phase Epitaxial Growth of III-V SemiconductorsI. Introduction; II. Growth Process; III. Specific Materials and Devices; IV. Summary and Future Directions; References; Chapter 4. Halide and Chloride Transport Vapor-Phase Deposition of InGaAsP and GaAs; I. Introduction; II. Halide Transport; III. Thermodynamic Model; IV. Aspects of the Growth Mechanisms; V. Conclusion; Appendix; References; Chapter 5. Low-Pressure Metallo-Organic Chemical Vapor Deposition of GaxIn1-xAsyP1-y Alloys; I. Introduction; II. Growth Technique; III. Growth and Characterization of InP | |
| 505 | 8 | |a IV. Growth and characterization of GaInAsV. Growth and Characterization of GaInAsP; VI. Conclusion; References; Chapter 6. Defects in III -- V Compound Semiconductors; I. Introduction; II. Native and Process-Induced Defects in Optoelectronic Materials; III. Electronic Properties of Dislocations; IV. Degradation-Induced Defects; V. Conclusion; References; Index; Contents of Volume 22; Contents of Previous Volumes | |
| 520 | |a SEMICONDUCTORS & SEMIMETALS V22. | ||
| 546 | |a English. | ||
| 650 | 0 | |a Telecommunication systems. | |
| 650 | 0 | |a Laser communication systems. | |
| 650 | 0 | |a Integrated optics. | |
| 650 | 6 | |a Syst�emes de t�el�ecommunications. |0 (CaQQLa)201-0023227 | |
| 650 | 6 | |a Syst�emes de communication �a laser. |0 (CaQQLa)201-0016342 | |
| 650 | 6 | |a Optique int�egr�ee. |0 (CaQQLa)201-0035088 | |
| 650 | 7 | |a telecommunication systems. |2 aat |0 (CStmoGRI)aat300008610 | |
| 650 | 7 | |a Integrated optics |2 fast |0 (OCoLC)fst00975646 | |
| 650 | 7 | |a Laser communication systems |2 fast |0 (OCoLC)fst00992797 | |
| 650 | 7 | |a Telecommunication systems |2 fast |0 (OCoLC)fst01146038 | |
| 700 | 1 | |a Tsang, W. T. | |
| 776 | 0 | |z 0127521224 | |
| 830 | 0 | |a Semiconductors and semimetals ; |v v. 22A, pt. A. | |
| 856 | 4 | 0 | |u https://sciencedirect.uam.elogim.com/science/book/9780127521220 |z Texto completo |
| 856 | 4 | 0 | |u https://sciencedirect.uam.elogim.com/science/bookseries/00808784/22/part/PA |z Texto completo |