Semiconductors and semimetals. optical and photothermal characterization / Volume 46, Effect of disorder and defects in ion-implanted semiconductors :
Defects in ion-implanted semiconductors are important and will likely gain increased importance as annealing temperatures are reduced with successive IC generations. Novel implant approaches, such as MdV implantation, create new types of defects whose origin and annealing characteristics will need t...
Clasificación: | Libro Electrónico |
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Otros Autores: | , |
Formato: | Electrónico eBook |
Idioma: | Inglés |
Publicado: |
San Diego :
Academic Press,
�1997.
|
Colección: | Semiconductors and semimetals ;
46. |
Temas: | |
Acceso en línea: | Texto completo Texto completo |
Sumario: | Defects in ion-implanted semiconductors are important and will likely gain increased importance as annealing temperatures are reduced with successive IC generations. Novel implant approaches, such as MdV implantation, create new types of defects whose origin and annealing characteristics will need to be addressed. Publications in this field mainly focus on the effects of ion implantation on the material and the modification in the implanted layer after high temperature annealing. The editors of this volume and Volume 45 focus on the physics of the annealing kinetics of the damaged layer. An overview of characterization tehniques and a critical comparison of the information on annealing kinetics is also presented. Key Features * Provides basic knowledge of ion implantation-induced defects * Focuses on physical mechanisms of defect annealing * Utilizes electrical, physical, and optical characterization tools for processed semiconductors * Provides the basis for understanding the problems caused by the defects generated by implantation and the means for their characterization and elimination. |
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Descripción Física: | 1 online resource (xvi, 316 pages) : illustrations |
ISBN: | 0127521461 9780127521466 1281514004 9781281514004 9786611514006 6611514007 0080864430 9780080864433 |