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III-V semiconductor materials and devices /
The main emphasis of this volume is on III-V semiconductor epitaxial and bulk crystal growth techniques. Chapters are also included on material characterization and ion implantation. In order to put these growth techniques into perspective a thorough review of the physics and technology of III-V dev...
| Clasificación: | Libro Electrónico |
|---|---|
| Otros Autores: | |
| Formato: | Electrónico eBook |
| Idioma: | Inglés |
| Publicado: |
Amsterdam ; New York : New York, NY USA :
North-Holland ; Sole distributors for the USA and Canada, Elsevier Science Pub. Co.,
1989.
|
| Colección: | Materials processing, theory and practices ;
v. 7. |
| Temas: | |
| Acceso en línea: | Texto completo Texto completo |
MARC
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| 245 | 0 | 0 | |a III-V semiconductor materials and devices / |c edited by R.J. Malik. |
| 260 | |a Amsterdam ; |a New York : |b North-Holland ; |a New York, NY USA : |b Sole distributors for the USA and Canada, Elsevier Science Pub. Co., |c 1989. | ||
| 300 | |a 1 online resource (xii, 727 pages) : |b illustrations | ||
| 336 | |a text |b txt |2 rdacontent | ||
| 337 | |a computer |b c |2 rdamedia | ||
| 338 | |a online resource |b cr |2 rdacarrier | ||
| 490 | 1 | |a Materials processing, theory and practices ; |v v. 7 | |
| 504 | |a Includes bibliographical references. | ||
| 520 | |a The main emphasis of this volume is on III-V semiconductor epitaxial and bulk crystal growth techniques. Chapters are also included on material characterization and ion implantation. In order to put these growth techniques into perspective a thorough review of the physics and technology of III-V devices is presented. This is the first book of its kind to discuss the theory of the various crystal growth techniques in relation to their advantages and limitations for use in III-V semiconductor devices. | ||
| 506 | |3 Use copy |f Restrictions unspecified |2 star |5 MiAaHDL | ||
| 533 | |a Electronic reproduction. |b [Place of publication not identified] : |c HathiTrust Digital Library, |d 2010. |5 MiAaHDL | ||
| 538 | |a Master and use copy. Digital master created according to Benchmark for Faithful Digital Reproductions of Monographs and Serials, Version 1. Digital Library Federation, December 2002. |u http://purl.oclc.org/DLF/benchrepro0212 |5 MiAaHDL | ||
| 583 | 1 | |a digitized |c 2010 |h HathiTrust Digital Library |l committed to preserve |2 pda |5 MiAaHDL | |
| 588 | 0 | |a Print version record. | |
| 505 | 0 | |a Front Cover; III-V Semiconductor Materials and Devices; Copyright Page; Introduction to the Series; Previous Volumes in The Series; Preface to Volume 7; Table of Contents; ADVISORY BOARD; CHAPTER 1. MELT-GROWTH OF III-V COMPOUNDS BY THE LIQUID ENCAPSULATION AND HORIZONTAL GROWTH TECHNIQUES; 1. Introduction; 2. Melt-growth techniques; 3. Liquid Encapsulation; 4. Horizontal growth; 5. Fundamentals of crystal growth; 6. Crystal quality; Note added in proof; Acknowledgements; References; CHAPTER 2. LIQUID PHASE EPITAXIAL GROWTH; 1. Introduction; 2. Apparatus for multiple-layer LPE | |
| 505 | 8 | |a 3. Growth of GaAs- AlxGa1-xAs layers4. LPE growth of GalnAsP; References; CHAPTER 3. VAPOR PHASE EPITAXY OF III- V SEMICONDUCTORS; 1. Introduction; 2. Basic system parameters; 3. System processes; 4. System parameter effects; 5. III-V alloys; 6. Summary; References; CHAPTER 4. METALORGANIC CHEMICAL VAPOR DEPOSITION OF III -V SEMICONDUCTORS; 1. Introduction; 2. MOCVD growth processes-basic reactions; 3. AlAs-GaAs materials growth by MOCVD; 4. The InGaAsP materials systems; 5. Other materials systems; 6. Heterostructure devices by MOCVD; 7. Future directions; Acknowledgments; References | |
| 505 | 8 | |a CHAPTER 5. MOLECULAR BEAM EPITAXY1. Introduction; 2. MBE systems -- components and their functions; 3. Growth processes and procedures of GaAs and related compounds; 4. Characterization of MBE-grown GaAs, (AlGa)As, and their heterostructures; 5. Growth and properties of various material systems; 6. Concluding remarks and future challenges; Note to the reference list; References; CHAPTER 6. ION IMPLANTATION IN III-V SEMICONDUCTORS; 1. Introduction; 2. General considerations; 3. Parameters that affect implantation results; 4. n-type impurities; 5. p-type impurities; 6. High-resistivity layers | |
| 505 | 8 | |a 7. Applications8. Conclusions; Acknowledgments; References; CHAPTER 7. CHARACTERIZATION OF III-V SEMICONDUCTORS; 1. Introduction; 2. Optical characterization; 3. Electrical characterization; Note added in proof:; Acknowledgments; References; CHAPTER 8. III-V SEMICONDUCTOR DEVICES; 1. Introduction and material selection; 2. Principles used in devices; 3. Electronic devices; 4. Opto-electronic devices; 5. Sensors; References; References added in proof; SUBJECT INDEX | |
| 546 | |a English. | ||
| 650 | 0 | |a Gallium arsenide semiconductors. | |
| 650 | 6 | |a Ars�eniure de gallium. |0 (CaQQLa)201-0035005 | |
| 650 | 7 | |a TECHNOLOGY & ENGINEERING |x Electronics |x Semiconductors. |2 bisacsh | |
| 650 | 7 | |a TECHNOLOGY & ENGINEERING |x Electronics |x Solid State. |2 bisacsh | |
| 650 | 7 | |a Gallium arsenide semiconductors. |2 fast |0 (OCoLC)fst00937276 | |
| 650 | 7 | |a Aufsatzsammlung |2 gnd |0 (DE-588)4143413-4 | |
| 650 | 7 | |a Drei-F�unf-Halbleiter |2 gnd |0 (DE-588)4150649-2 | |
| 650 | 7 | |a Semiconducteurs �a l'ars�eniure de gallium. |2 ram | |
| 653 | 0 | |a Semiconductors | |
| 700 | 1 | |a Malik, R. J., |d 1954- | |
| 740 | 0 | |a 3-5 semiconductor materials and devices. | |
| 740 | 0 | |a Three-five semiconductor materials and devices. | |
| 776 | 0 | 8 | |i Print version: |w (DLC) 88039714 |w (OCoLC)18683719 |
| 830 | 0 | |a Materials processing, theory and practices ; |v v. 7. | |
| 856 | 4 | 0 | |u https://sciencedirect.uam.elogim.com/science/book/9780444870742 |z Texto completo |
| 856 | 4 | 0 | |u https://sciencedirect.uam.elogim.com/science/bookseries/0167790X |z Texto completo |