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Integrated optoelectronics /

Integrated optoelectronics is becoming ever more important to communications, computer, and consumer industries. It is the enabling technology in a variety of systems, ranging from low-cost, robust optical componentsin consumer electronics to high-performance broadband information networks capable o...

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Détails bibliographiques
Cote:Libro Electrónico
Autres auteurs: Dagenais, Mario, 1953-, Leheny, Robert F., Crow, John (John D.)
Format: Électronique eBook
Langue:Inglés
Publié: San Diego : Academic Press, �1995.
Collection:Quantum electronics--principles and applications.
Sujets:
Accès en ligne:Texto completo
Table des matières:
  • Front Cover; Integrated Optoelectronics; Copyright Page; Table of Contents; Contributors; Preface; PART I: SYSTEM REQUIREMENTS FOR OEICs; Chapter 1. TELECOMMUNICATIONS SYSTEM APPLICATIONS FOR OPTOELECTRONIC INTEGRATED CIRCUITS; 1. Why Optoelectronic Integration?; 2. A Vision of the Future Broadband Network; 3. Access to the Broadband Network; 4. Linear Lightwave Networks; 5. Conclusions; Appendix: Functional OEIC Catalog; References; Chapter 2. COMPUTING SYSTEM APPLICATIONS; 1. Introduction; 2. Trends in the Computer Industry; 3. System-Level Issues Related to Technology Requirements.
  • 4. Optoelectronics Technology Requirements and Status5. Opportunities and Requirements for an OEIC Technology; 6. Summary; References; PART II: MATERIALS GROWTH; Chapter 3. MOLECULAR BEAM EPITAXY WITH GASEOUS SOURCES; 1. Introduction; 2. Gas-Source MBE; 3. MOMBE and CBE; 4. Selective-Area Growth; 5. Alternative Sources; 6. Concluding Remarks; ACKNOWLEDGMENTS; References; Chapter 4. ORGANOMETALLIC CHEMICAL VAPOR DEPOSITION FOR OPTOELECTRONIC INTEGRATED CIRCUITS; 1. Introduction; 2. Materials Capabilities for OEIC Fabrication; 3. Uniformity and Scale-Up; 4. Safety; 5. Conclusions; References.
  • Chapter 5. LATTICE-MISMATCHED HETEROEPITAXY1. Introduction; 2. Strained Layers and Related Growth Issues; 3. Heteroepitaxy; 4. Dislocations and Other Defects; 5. Dislocation Reduction; 6. Optoelectronic Devices on Silicon Substrates; 7. Monolithic Devices; 8. Conclusions; References; PART III: DEVICE PROCESSING; Chapter 6. FOCUSED ION BEAM FABRICATION TECHNIQUES FOR OPTOELECTRONICS; 1. INTRODUCTION; 2. Focused Ion Beam Systems; 3. Micromachining; 4. Maskless Implantation; 5. Lithography for in Situ Processing; 6. Summary; References.
  • Chapter 7. FULL-WAFER TECHNOLOGY FOR LARGE-SCALE LASER FABRICATION AND INTEGRATION1. Introduction; 2. Cleaved Mirror Technology; 3. Etched Mirror Technology; 4. Full-Wafer Processing; 5. Etched Mirror Characterization; 6. Full-Wafer Testing; 7. Summary; References; Chapter 8. EPITAXIAL LIFT-OFF AND RELATED TECHNIQUES; 1. Introduction; 2. Technique; 3. Applications; 4. Unanswered Questions; 5. Outlook; 6. Conclusion; References; PART IV: STATE-OF-THE-ART DISCRETE COMPONENTS; Chapter 9. ELECTRONICS FOR OPTOELECTRONIC INTEGRATED CIRCUITS; 1. Device Noise Performance.
  • 2. Receiver Noise in Field Effect Transistors3. Noise in Bipolar Transistors; 4. Heterojunction Bipolar Transistor Designs; 5. Heterojunction Bipolar Transistor Device Geometry; 6. High-Performance FET Designs; 7. Optoelectronic Integrated Circuits; References; Chapter 10. LASERS AND MODULATORS FOR OEICS; 1. Introduction; 2. Lasers for OIECs; 3. Modulators for OEICs; References; Chapter 11. PHOTODETECTORS FOR OPTOELECTRONIC INTEGRATED CIRCUITS; 1. Introduction; 2. p-i-n Photodiodes; 3. MSM Photodiodes; 4. Conclusion; References; PART V: OPTOELECTRONIC INTEGRATED CIRCUITS (OEICs).