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Semiconductors for room temperature nuclear detector applications /
Since its inception in 1966, the series of numbered volumes known as Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. The"Willardson and Beer"Series, as it is widely known, has succeeded in publishing num...
| Clasificación: | Libro Electrónico |
|---|---|
| Otros Autores: | , |
| Formato: | Electrónico eBook |
| Idioma: | Inglés |
| Publicado: |
San Diego :
Academic Press,
�1995.
|
| Colección: | Semiconductors and semimetals ;
v. 43. |
| Temas: | |
| Acceso en línea: | Texto completo Texto completo |
MARC
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| 245 | 0 | 0 | |a Semiconductors for room temperature nuclear detector applications / |c volume editors, T.E. Schlesinger [and] Ralph B. James. |
| 260 | |a San Diego : |b Academic Press, |c �1995. | ||
| 300 | |a 1 online resource (xvii, 606 pages) : |b illustrations | ||
| 336 | |a text |b txt |2 rdacontent | ||
| 337 | |a computer |b c |2 rdamedia | ||
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| 490 | 1 | |a Semiconductors and semimetals ; |v v. 43 | |
| 504 | |a Includes bibliographical references and index. | ||
| 588 | 0 | |a Print version record. | |
| 520 | |a Since its inception in 1966, the series of numbered volumes known as Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. The"Willardson and Beer"Series, as it is widely known, has succeeded in publishing numerous landmark volumes and chapters. Not only did many of these volumes make an impact at the time of their publication, but they continue to be well-cited years after their original release. Recently, Professor Eicke R. Weber of the University of California at Berkeley joined as a co-editor of the series. Professor Weber, a well-known expert in the field of semiconductor materials, will further contribute to continuing the series' tradition of publishing timely, highly relevant, and long-impacting volumes. Some of the recent volumes, such as Hydrogen in Semiconductors, Imperfections in III/V Materials, Epitaxial Microstructures, High-Speed Heterostructure Devices, Oxygen in Silicon, and others promise indeed that this tradition will be maintained and even expanded. Reflecting the truly interdisciplinary nature of the field that the series covers, the volumes in Semiconductors and Semimetals have been and will continue to be of great interest to physicists, chemists, materials scientists, and device engineersin modern industry. Key Features * One of the first comprehensive works on room-temperature nuclear detectors * Edited by technical experts in the field * Written by recognized authorities from industrial and academic institutions * Focused on the electrical, optical, and structural properties of semiconductors used for room-temperature nuclear detectors | ||
| 506 | |3 Use copy |f Restrictions unspecified |2 star |5 MiAaHDL | ||
| 533 | |a Electronic reproduction. |b [Place of publication not identified] : |c HathiTrust Digital Library, |d 2010. |5 MiAaHDL | ||
| 538 | |a Master and use copy. Digital master created according to Benchmark for Faithful Digital Reproductions of Monographs and Serials, Version 1. Digital Library Federation, December 2002. |u http://purl.oclc.org/DLF/benchrepro0212 |5 MiAaHDL | ||
| 583 | 1 | |a digitized |c 2010 |h HathiTrust Digital Library |l committed to preserve |2 pda |5 MiAaHDL | |
| 505 | 0 | |a Front Cover; Semiconductors for Room Temperature Nuclear Detector Applications; Copyright Page; Contents; List of Contributors; Preface; Chapter 1. Introduction and Overview; I. Introduction; II. Semiconductor Nuclear Detectors; III. Applications; IV. Outline of Text; References; Chapter 2. High-Purity Germanium Detectors; I. Introduction; II. Crystal Growth; III. Characterization; IV. Large Volume Detectors; V. Charge Collection; VI. Germanium X-Ray Detectors; VII. Summary; References; Chapter 3. Growth of Mercuric Iodide; I. The Crystal Structure and Phases of Mercuric Iodide. | |
| 505 | 8 | |a II. Physical Properties Relevant to Crystal GrowthIII. Growth of High Purity Mercuric Iodide Crystals; IV. Crystal Perfection; V. Recent Developments; VI. Challenges in Crystal Growth; References; Chapter 4. Electrical Properties of Mercuric Iodide; List of Symbols; I. Introduction; II. Carrier Transport; III. Deep Levels; IV. Photoconductivity; V. Surface Effects; VI. Detector Performance; VII. Conclusions; References; Chapter 5. Optical Properties of Red Mercuric Iodide; I. Introduction; II. Band Structure; III. Experimental Techniques and Measured Values for Optical Constants. | |
| 505 | 8 | |a IV. Study of Processing by Photoluminescence SpectroscopyV. Conclusions; References; Chapter 6. Growth Methods of CdTe Nuclear Detector Materials; I. Introduction; II. Phase Diagram; III. Synthesis and Purification; IV. Growth of Bulk CdTe; V. High Resistivity Materials; VI. Experimental Results and Conclusion; References; Chapter 7. Characterization of CdTe Nuclear Detector Materials; I. Introduction; II. Impurities Analysis; III. Surface Analysis; IV. Electrical and Optical Characterization; V. Discussion and Conclusions; References; Chapter 8. CdTe Nuclear Detectors and Applications. | |
| 505 | 8 | |a I. IntroductionII. Detection Parameters; III. CdTe Detectors; IV. Improvement of Detector Quality; V. Applications of CdTe Detectors; References; Chapter 9. Cd1 -x Znx Te Spectrometers for Gamma and X-Ray Applications; I. Introduction; II. Growth of Cd1-x ZnxTe Crystals; III. Material Properties of Cd1 -x ZnxTe; IV. Defect Characterization and Effects on Device Response; V. Detector Characterization and Effects on Device Response; VI. Imaging Applications; VII. Future Work; References; Chapter 10. Gallium Arsenide Radiation Detectors and Spectrometers; List of Symbols; I. Introduction. | |
| 505 | 8 | |a II. Basic Properties of GaAsIII. General Detector Operation; IV. Epitaxial GaAs Detectors; V. Bulk GaAs Detectors Operated in Quantum Pulse Mode; VI. Bulk GaAs Photoconductive Detectors Operated in Current Mode; VII. Summary; References; Chapter 11. Lead Iodide Crystals and Detectors; I. Introduction; II. Physical Properties; III. Preparation of Lead Iodide Crystals; IV. Radiation Detector Fabrication and Implementation; V. Potential Applications of Lead Iodide; VI. Conclusion; References; Chapter 12. Other Materials: Status and Prospects; I. Introduction; II. Detector Materials. | |
| 506 | 1 | |a Legal Deposit; |c Only available on premises controlled by the deposit library and to one user at any one time; |e The Legal Deposit Libraries (Non-Print Works) Regulations (UK). |5 WlAbNL | |
| 540 | |a Restricted: Printing from this resource is governed by The Legal Deposit Libraries (Non-Print Works) Regulations (UK) and UK copyright law currently in force. |5 WlAbNL | ||
| 650 | 0 | |a Semiconductor nuclear counters. | |
| 650 | 0 | |a Semiconductors. | |
| 650 | 2 | |a Semiconductors |0 (DNLM)D012666 | |
| 650 | 6 | |a D�etecteurs �a semi-conducteurs. |0 (CaQQLa)201-0107717 | |
| 650 | 6 | |a Semi-conducteurs. |0 (CaQQLa)201-0318258 | |
| 650 | 7 | |a semiconductor. |2 aat |0 (CStmoGRI)aat300015117 | |
| 650 | 7 | |a SCIENCE |x Physics |x Electricity. |2 bisacsh | |
| 650 | 7 | |a Semiconductor nuclear counters |2 fast |0 (OCoLC)fst01112177 | |
| 650 | 7 | |a Semiconductors |2 fast |0 (OCoLC)fst01112198 | |
| 650 | 7 | |a D�etecteurs �a semiconducteurs (physique nucl�eaire) |2 ram | |
| 650 | 7 | |a Semiconducteurs. |2 ram | |
| 653 | 0 | |a Radiation |a Measurement | |
| 700 | 1 | |a Schlesinger, T. Ehud. | |
| 700 | 1 | |a James, R. B. |q (Ralph B.) | |
| 776 | 0 | 8 | |i Print version: |t Semiconductors for room temperature nuclear detector applications. |d San Diego : Academic Press, �1995 |z 0127521437 |z 9780127521435 |w (OCoLC)33063091 |
| 830 | 0 | |a Semiconductors and semimetals ; |v v. 43. | |
| 856 | 4 | 0 | |u https://sciencedirect.uam.elogim.com/science/book/9780127521435 |z Texto completo |
| 856 | 4 | 0 | |u https://sciencedirect.uam.elogim.com/science/bookseries/00808784/43 |z Texto completo |