Loading…
Effect of disorder and defects in ion-implanted semiconductors : electrical and physicochemical characterization /
Defects in ion-implanted semiconductors are important and will likely gain increased importance in the future as annealing temperatures are reduced with successive IC generations. Novel implant approaches, such as MdV implantation, create new types of defects whose origin and annealing characteristi...
| Call Number: | Libro Electrónico |
|---|---|
| Other Authors: | , |
| Format: | Electronic eBook |
| Language: | Inglés |
| Published: |
San Diego :
Academic Press,
�1997.
|
| Series: | Semiconductors and semimetals ;
v. 45. |
| Subjects: | |
| Online Access: | Texto completo Texto completo |