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Silicon-Germanium Strained Layers and Heterostructures /
The study of Silicone Germanium strained layers has broad implications for material scientists and engineers, in particular those working on the design and modelling of semi-conductor devices. Since the publication of the original volume in 1994, there has been a steady flow of new ideas, new unders...
| Call Number: | Libro Electrónico |
|---|---|
| Other Authors: | , |
| Format: | Electronic eBook |
| Language: | Inglés |
| Published: |
San Diego, CA ; London :
Academic,
2003.
|
| Edition: | [Second edition]. |
| Series: | Semiconductors and semimetals ;
v. 74. |
| Subjects: | |
| Online Access: | Texto completo Texto completo Texto completo |
Table of Contents:
- Introduction; Strain, Stability, reliability and growth; mechanism of strain relaxation; strain, growth, and TED in SiGeC layers; Bandstructure and related properties; Heterostructure Bipolar Transistors; FETs and other devices.