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Silicon-Germanium Strained Layers and Heterostructures /
The study of Silicone Germanium strained layers has broad implications for material scientists and engineers, in particular those working on the design and modelling of semi-conductor devices. Since the publication of the original volume in 1994, there has been a steady flow of new ideas, new unders...
| Clasificación: | Libro Electrónico |
|---|---|
| Otros Autores: | , |
| Formato: | Electrónico eBook |
| Idioma: | Inglés |
| Publicado: |
San Diego, CA ; London :
Academic,
2003.
|
| Edición: | [Second edition]. |
| Colección: | Semiconductors and semimetals ;
v. 74. |
| Temas: | |
| Acceso en línea: | Texto completo Texto completo Texto completo |
MARC
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| 245 | 0 | 0 | |a Silicon-Germanium Strained Layers and Heterostructures / |c S.C. Jain, M. Willander. |
| 250 | |a [Second edition]. | ||
| 264 | 1 | |a San Diego, CA ; |a London : |b Academic, |c 2003. | |
| 300 | |a 1 online resource (xiv, 308 pages) : |b illustrations | ||
| 336 | |a text |b txt |2 rdacontent | ||
| 337 | |a computer |b c |2 rdamedia | ||
| 338 | |a online resource |b cr |2 rdacarrier | ||
| 490 | 1 | |a Semiconductors and semimetals ; |v v. 74 | |
| 546 | |a Text in English. | ||
| 520 | |a The study of Silicone Germanium strained layers has broad implications for material scientists and engineers, in particular those working on the design and modelling of semi-conductor devices. Since the publication of the original volume in 1994, there has been a steady flow of new ideas, new understanding, new Silicon-Germanium (SiGe) structures and new devices with enhanced performance. Written for both students and senior researchers, the 2nd edition of Silicon-Germanium Strained Layers and Heterostructures provides an essential up-date of this important topic, describing in particular the recent developments in technology and modelling. * Fully-revised and updated 2nd edition incorporating important recent breakthroughs and a complete literature review * The extensive bibliography of over 400 papers provides a comprehensive and coherent overview of the subject * Appropriate for students and senior researchers. | ||
| 505 | 0 | |a Introduction; Strain, Stability, reliability and growth; mechanism of strain relaxation; strain, growth, and TED in SiGeC layers; Bandstructure and related properties; Heterostructure Bipolar Transistors; FETs and other devices. | |
| 500 | |a Previous edition: published as Germanium-silicon strained layers and heterostuctures by Suresh C. Jain. Boston: Academic, 1994. | ||
| 504 | |a Includes bibliographical references (pages 243-280) and index. | ||
| 588 | 0 | |a Print version record. | |
| 650 | 0 | |a Compound semiconductors. | |
| 650 | 0 | |a Layer structure (Solids) | |
| 650 | 0 | |a Heterostructures. | |
| 650 | 0 | |a Germanium. | |
| 650 | 0 | |a Silicon. | |
| 650 | 2 | |a Germanium |0 (DNLM)D005857 | |
| 650 | 2 | |a Silicon |0 (DNLM)D012825 | |
| 650 | 6 | |a Compos�es semi-conducteurs. |0 (CaQQLa)201-0286429 | |
| 650 | 6 | |a Structure cristalline (Solides) |0 (CaQQLa)201-0122097 | |
| 650 | 6 | |a H�et�erostructures. |0 (CaQQLa)201-0259129 | |
| 650 | 6 | |a Germanium. |0 (CaQQLa)201-0005553 | |
| 650 | 6 | |a Silicium. |0 (CaQQLa)201-0052755 | |
| 650 | 7 | |a germanium. |2 aat |0 (CStmoGRI)aat300380222 | |
| 650 | 7 | |a silicon. |2 aat |0 (CStmoGRI)aat300011769 | |
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| 700 | 1 | |a Jain, S. C. |q (Suresh C.), |d 1926- |e editor. | |
| 700 | 1 | |a Willander, M., |e editor. | |
| 776 | 0 | 8 | |i Print version: |t Silicon-germanium strained layers and heterostructures. |b [2nd ed.]. |d San Diego, Calif. ; London : Academic, 2003 |z 0127521836 |z 9780127521831 |w (OCoLC)51965767 |
| 830 | 0 | |a Semiconductors and semimetals ; |v v. 74. | |
| 856 | 4 | 0 | |u https://sciencedirect.uam.elogim.com/science/book/9780127521831 |z Texto completo |
| 856 | 4 | 0 | |u https://sciencedirect.uam.elogim.com/science/bookseries/00808784/74 |z Texto completo |
| 856 | 4 | 0 | |u https://sciencedirect.uam.elogim.com/science/bookseries/00808784 |z Texto completo |