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Silicon-Germanium Strained Layers and Heterostructures /

The study of Silicone Germanium strained layers has broad implications for material scientists and engineers, in particular those working on the design and modelling of semi-conductor devices. Since the publication of the original volume in 1994, there has been a steady flow of new ideas, new unders...

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Detalles Bibliográficos
Clasificación:Libro Electrónico
Otros Autores: Jain, S. C. (Suresh C.), 1926- (Editor ), Willander, M. (Editor )
Formato: Electrónico eBook
Idioma:Inglés
Publicado: San Diego, CA ; London : Academic, 2003.
Edición:[Second edition].
Colección:Semiconductors and semimetals ; v. 74.
Temas:
Acceso en línea:Texto completo
Texto completo
Texto completo
Descripción
Sumario:The study of Silicone Germanium strained layers has broad implications for material scientists and engineers, in particular those working on the design and modelling of semi-conductor devices. Since the publication of the original volume in 1994, there has been a steady flow of new ideas, new understanding, new Silicon-Germanium (SiGe) structures and new devices with enhanced performance. Written for both students and senior researchers, the 2nd edition of Silicon-Germanium Strained Layers and Heterostructures provides an essential up-date of this important topic, describing in particular the recent developments in technology and modelling. * Fully-revised and updated 2nd edition incorporating important recent breakthroughs and a complete literature review * The extensive bibliography of over 400 papers provides a comprehensive and coherent overview of the subject * Appropriate for students and senior researchers.
Notas:Previous edition: published as Germanium-silicon strained layers and heterostuctures by Suresh C. Jain. Boston: Academic, 1994.
Descripción Física:1 online resource (xiv, 308 pages) : illustrations
Bibliografía:Includes bibliographical references (pages 243-280) and index.
ISBN:0127521836
9780127521831