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Silicon-Germanium Strained Layers and Heterostructures /
The study of Silicone Germanium strained layers has broad implications for material scientists and engineers, in particular those working on the design and modelling of semi-conductor devices. Since the publication of the original volume in 1994, there has been a steady flow of new ideas, new unders...
| Call Number: | Libro Electrónico |
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| Other Authors: | , |
| Format: | Electronic eBook |
| Language: | Inglés |
| Published: |
San Diego, CA ; London :
Academic,
2003.
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| Edition: | [Second edition]. |
| Series: | Semiconductors and semimetals ;
v. 74. |
| Subjects: | |
| Online Access: | Texto completo Texto completo Texto completo |
| Summary: | The study of Silicone Germanium strained layers has broad implications for material scientists and engineers, in particular those working on the design and modelling of semi-conductor devices. Since the publication of the original volume in 1994, there has been a steady flow of new ideas, new understanding, new Silicon-Germanium (SiGe) structures and new devices with enhanced performance. Written for both students and senior researchers, the 2nd edition of Silicon-Germanium Strained Layers and Heterostructures provides an essential up-date of this important topic, describing in particular the recent developments in technology and modelling. * Fully-revised and updated 2nd edition incorporating important recent breakthroughs and a complete literature review * The extensive bibliography of over 400 papers provides a comprehensive and coherent overview of the subject * Appropriate for students and senior researchers. |
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| Item Description: | Previous edition: published as Germanium-silicon strained layers and heterostuctures by Suresh C. Jain. Boston: Academic, 1994. |
| Physical Description: | 1 online resource (xiv, 308 pages) : illustrations |
| Bibliography: | Includes bibliographical references (pages 243-280) and index. |
| ISBN: | 0127521836 9780127521831 |