Semiconductor laser engineering, reliability and diagnostics : a practical approach to high power and single mode devices /

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"This reference book provides a fully integrated novel approach to the development of high power, single transverse mode, edge-emitting diode lasers by addressing the complementary topics of device engineering (Part 1), reliability engineering (Part 2) and device diagnostics (Part 3) in the sam...

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Bibliographic Details
Call Number:Libro Electrónico
Main Author: Epperlein, Peter W.
Format: Electronic eBook
Language:Inglés
Published: Chichester, West Sussex, U.K. : John Wiley & Sons Inc., 2013.
Subjects:
Semiconductor lasers.
Lasers, Semiconductor
Lasers à semi-conducteurs.
TECHNOLOGY & ENGINEERING > Lasers & Photonics.
Semiconductor lasers
HALBLEITERLASER + LASERDIODEN (LASERTECHNIK)
HOCHLEISTUNGSLASER + HOCHENERGIELASER (LASERTECHNIK)
HALBLEITERMATERIALIEN (ELEKTROTECHNIK)
LASERBAUTEILE + MASERBAUTEILE (ELEKTROTECHNIK)
SEMICONDUCTOR LASERS + LASER DIODES (LASER ENGINEERING)
LASER À SEMICONDUCTEUR + DIODES LASER (TECHNIQUE DES LASERS)
HIGH POWERED LASERS + HIGH ENERGY LASERS (LASER ENGINEERING)
LASER DE PUISSANCE + LASER HAUTE ÉNERGIE (TECHNIQUE DES LASERS)
MATÉRIAUX SEMICONDUCTEURS (ÉLECTROTECHNIQUE)
SEMICONDUCTOR MATERIALS (ELECTRICAL ENGINEERING)
ÉLÉMENTS DE LASER + ÉLÉMENTS DE MASER (ÉLECTROTECHNIQUE)
MASER COMPONENTS + LASER COMPONENTS (ELECTRICAL ENGINEERING)
Online Access:Texto completo (Requiere registro previo con correo institucional)
Table of Contents:
  • Semiconductor Laser Engineering, Reliability and Diagnostics; Contents; Preface; About the author; PART 1 DIODE LASER ENGINEERING; Overview; 1 Basic diode laser engineering principles; Introduction; 1.1 Brief recapitulation; 1.1.1 Key features of a diode laser; 1.1.1.1 Carrier population inversion; 1.1.1.2 Net gain mechanism; 1.1.1.3 Optical resonator; 1.1.1.4 Transverse vertical confinement; 1.1.1.5 Transverse lateral confinement; 1.1.2 Homojunction diode laser; 1.1.3 Double-heterostructure diode laser; 1.1.4 Quantum well diode laser.
  • 1.1.4.1 Advantages of quantum well heterostructures for diode lasersWavelength adjustment and tunability; Strained quantum well lasers; Optical power supply; Temperature characteristics; 1.1.5 Common compounds for semiconductor lasers; 1.2 Optical output power
  • diverse aspects; 1.2.1 Approaches to high-power diode lasers; 1.2.1.1 Edge-emitters; 1.2.1.2 Surface-emitters; 1.2.2 High optical power considerations; 1.2.2.1 Laser brightness; 1.2.2.2 Laser beam quality factor M2; 1.2.3 Power limitations; 1.2.3.1 Kinks; 1.2.3.2 Rollover; 1.2.3.3 Catastrophic optical damage; 1.2.3.4 Aging.
  • 1.3.4.3 Cavity length dependence1.3.4.4 Active layer thickness dependence; 1.3.5 Transverse vertical and transverse lateral modes; 1.3.5.1 Vertical confinement structures
  • summary; Double-heterostructure; Single quantum well; Strained quantum well; Separate confinement heterostructure SCH and graded-index SCH (GRIN-SCH); Multiple quantum well (MQW); 1.3.5.2 Lateral confinement structures; Gain-guiding concept and key features; Weakly index-guiding concept and key features; Strongly index-guiding concept and key features; 1.3.5.3 Near-field and far-field pattern.
  • 1.3.6 Fabry-Pérot longitudinal modes1.3.7 Operating characteristics; 1.3.7.1 Optical output power and efficiency; 1.3.7.2 Internal efficiency and optical loss measurements; 1.3.7.3 Temperature dependence of laser characteristics; 1.3.8 Mirror reflectivity modifications; 1.4 Laser fabrication technology; 1.4.1 Laser wafer growth; 1.4.1.1 Substrate specifications and preparation; 1.4.1.2 Substrate loading; 1.4.1.3 Growth; 1.4.2 Laser wafer processing; 1.4.2.1 Ridge waveguide etching and embedding; 1.4.2.2 The p-type electrode; 1.4.2.3 Ridge waveguide protection.

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