GaAs high-speed devices : physics, technology, and circuit applications /

The performance of high-speed semiconductor devices--the genius driving digital computers, advanced electronic systems for digital signal processing, telecommunication systems, and optoelectronics--is inextricably linked to the unique physical and electrical properties of gallium arsenide. Once view...

Descripción completa

Detalles Bibliográficos
Clasificación:Libro Electrónico
Autor principal: Chang, C. Y., 1937-
Otros Autores: Kai, Francis, 1956-
Formato: Electrónico eBook
Idioma:Inglés
Publicado: New York : J. Wiley & Sons, ©1994.
Temas:
Gallium arsenide semiconductors.
Integrated circuits.
Gallium arsenide.
Arséniure de gallium.
Circuits intégrés.
Gallium arsenide
Gallium arsenide semiconductors
Integrated circuits
Electrical & Computer Engineering.
Engineering & Applied Sciences.
Electrical Engineering.
Semiconductors
Acceso en línea:Texto completo (Requiere registro previo con correo institucional)
Tabla de Contenidos:
  • Development of gallium arsenide devices and integrated circuits
  • Gallium arsenide crystal structure and growth
  • Epitaxial growth processes
  • Process techniques
  • Lithography
  • Device-related physics and principles
  • Metal-to-GaAs contacts
  • GaAs metal-semiconductor field-effect transistor
  • High electron-mobility transistor (HEMT)
  • Heterojunction bipolar transistors
  • Resonant-tunneling transistors
  • Hot-electron transistors and novel devices
  • GaAs FET amplifiers and monolithic microwave integrated circuits
  • GaAs digital integrated circuits
  • High-speed photonic devices.

Ejemplares similares