Compact MOSFET models for VLSI design /

Practicing designers, students, and educators in the semiconductor field face an ever expanding portfolio of MOSFET models. In Compact MOSFET Models for VLSI Design, A.B. Bhattacharyya presents a unified perspective on the topic, allowing the practitioner to view and interpret device phenomena concu...

Description complète

Détails bibliographiques
Cote:Libro Electrónico
Auteur principal: Bhattacharyya, A. B. (Amalendu Bhushan)
Format: Électronique eBook
Langue:Inglés
Publié: Singapore ; Hoboken, NJ : [Piscataway, NJ] : John Wiley & Sons (Asia) ; IEEE Press, ©2009.
Sujets:
Integrated circuits > Very large scale integration > Design and construction.
Metal oxide semiconductor field-effect transistors > Design and construction.
TECHNOLOGY & ENGINEERING > Mechanical.
Integrated circuits > Very large scale integration > Design and construction
Metal oxide semiconductor field-effect transistors > Design and construction
VLSI
MOS-FET
Accès en ligne:Texto completo (Requiere registro previo con correo institucional)
Description
Résumé:Practicing designers, students, and educators in the semiconductor field face an ever expanding portfolio of MOSFET models. In Compact MOSFET Models for VLSI Design, A.B. Bhattacharyya presents a unified perspective on the topic, allowing the practitioner to view and interpret device phenomena concurrently using different modeling strategies. Readers will learn to link device physics with model parameters, helping to close the gap between device understanding and its use for optimal circuit performance. Bhattacharyya also lays bare the core physical concepts that will drive the future of VLSI.
Description matérielle:1 online resource (xxiv, 432 pages) : illustrations
Bibliographie:Includes bibliographical references and index.
ISBN:0470823437
9780470823439
9780470823446
0470823445
9786612382109
6612382104

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