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Fault diagnosis for robust inverter power drives /
This book deals with the concept that the specification of a power component needs a life expectancy associated with other important factors, to allow the appropriate component selection when designing robust and reliable systems. An analysis of the fundamental physics of aging in power drive compon...
| Clasificación: | Libro Electrónico |
|---|---|
| Otros Autores: | |
| Formato: | Electrónico eBook |
| Idioma: | Inglés |
| Publicado: |
London :
Institution of Engineering and Technology,
2018.
|
| Colección: | IET energy engineering series ;
120. |
| Temas: | |
| Acceso en línea: | Texto completo |
Tabla de Contenidos:
- Intro; Contents; Preface; 1. Fundamentals for reliability and early diagnosis for inverter power drives / José Manuel Aller, Antonio Ginart, and George Vachtsevanos; 1.1 Introduction; 1.1.1 Manufacture defects (early failure); 1.1.2 Random failure; 1.1.3 Wear-out failure; 1.2 Statistical life estimation and failure rate: the bathtub curve; 1.2.1 Reliability R(t) and unreliability F(t) functions; 1.2.2 Probability density function and medium time before failure; 1.2.3 Failure rate function; 1.2.4 Exponential distribution; 1.2.5 Weibull distribution
- 1.3 Degradation, failure mechanisms, and life model estimation1.3.1 Solid-stare materials; 1.3.2 Failure modes and physics-based life model calculation; 1.4 Inverters failure and power drives; 1.5 Circuit with ideal switches: power switches fundamentals; 1.6 PWM, the enabler of power electronics; 1.7 Switching under RL circuit load; 1.8 RLC circuit; 1.8.1 Series RLC model; 1.8.2 Shunt RLC model; 1.9 PWM in inverters; 1.10 Inverter basic operation; 1.11 Three-phase and multilevel inverters; 1.12 Operation principle of multilevel inverters; 1.13 Dominant topology; 1.14 Resonant converters
- 1.15 Real switches: power losses in hard switching1.15.1 Conduction losses; 1.15.2 Switching losses; 1.16 Thermal consideration; 1.16.1 State modeling of the thermal system; 1.16.2 Thermal runaway; References; 2. Early diagnosis in power semiconductors: MOSFET, IGBT, emerging materials (SiC and GaNs) / Antonio Ginart, José M. Aller, and George J. Vachtsevanos; 2.1 Introduction; 2.1.1 Power device stress factors; 2.1.2 Silicon power MOSFET structure and parasitics; 2.1.3 SiC power MOSFET structure and parasitics; 2.1.4 GaNs structure and parasitics; 2.1.5 IGBT structure and latch-up
- 2.2 Switching process in semiconductors2.2.1 Field distortion acceleration model; 2.3 Relevant indicators in power semiconductors; 2.3.1 Voltage Vth and capacitance shift; 2.3.2 Ringing characterization and turn-on delay; 2.3.3 Detachment and wire bond fatigue; 2.3.4 Junction temperature of power semiconductor; References; 3. Early diagnosis in DC-link capacitors: electrolytic and films / Chetan Kulkarni, José Celaya, and Kai Goebel; 3.1 Introduction; 3.1.1 Research challenges; 3.1.2 Organization; 3.2 Modeling for prognostics; 3.3 Research methodology
- 3.4 Degradation in electrolytic capacitors3.4.1 Degradation mechanisms; 3.4.2 Capacitor degradation models; 3.4.3 Physics-based models for C and ESR; 3.4.4 Time-dependent degradation models; 3.5 Model-based prognostics framework; 3.5.1 Kalman filter for state estimation; 3.5.2 Future state forecasting; 3.5.3 Noise models; 3.5.4 Prognostics problem formulation; 3.5.5 Physics-based modeling framework using unscented Kalman filter; 3.6 Accelerated aging experiments; 3.6.1 Experimental setup; 3.6.2 Electrical overstress; 3.6.3 EOS experiment