Cargando…
Defects in semiconductors /
This volume, number 91 in the Semiconductor and Semimetals series, focuses on defects in semiconductors. Defects in semiconductors help to explain several phenomena, from diffusion to getter, and to draw theories on materials' behavior in response to electrical or mechanical fields. The volume...
| Clasificación: | Libro Electrónico |
|---|---|
| Otros Autores: | , , |
| Formato: | Electrónico eBook |
| Idioma: | Inglés |
| Publicado: |
Waltham, MA :
Academic Press is an imprint of Elsevier,
2015.
|
| Edición: | First edition. |
| Colección: | Semiconductors and semimetals ;
v. 91. |
| Temas: | |
| Acceso en línea: | Texto completo |
Tabla de Contenidos:
- Front Cover; Defects in Semiconductors; Copyright; Contents; Contributors; Preface; Chapter 1: Role of Defects in the Dopant Diffusion in Si; 1. Introduction; 2. The Framework of Diffusion-Reaction Equations; 3. Diffusion of Substitutional Dopants via Intrinsic Point Defects; 3.1. Basic diffusion mechanisms; 3.2. Pair diffusion models; 3.3. System behavior; 4. Dopants in Silicon and Their Diffusion Mechanisms; 5. Nonequilibrium Processes; 6. Precipitates, Clusters, and Complexes; 6.1. Dopant phases and precipitates; 6.2. Dopant clusters; 6.3. Ion pairs; 7. Interface Segregation; References.
- Chapter 2: Electron and Proton Irradiation of Silicon1. Introduction; 2. Irradiation of Silicon: General Issues; 3. The Elementary Act: Frenkel Pair; 3.1. The Vacancy; 3.1.1. Electronic Structure and Electrical Level Positions; 3.1.2. Diffusion Mechanism; 3.2. The Self-Interstitial; 3.2.1. Electronic Structure and Electrical Level Positions; 3.2.2. Diffusion Mechanism; 4. Branching Reactions: Basic Considerations; 4.1. Branching Reactions of the Vacancy; 4.1.1. Annealing Under Nonequilibrium Conditions: The Case of E-Center; 4.2. Branching Reactions of the Interstitial.
- 5. Complexes Consisting of the Native Defects5.1. The Divacancy; 5.2. The Trivacancy; 5.3. The Di-Interstitial; 5.4. The Tri-Interstitial; 6. Summary; References; Chapter 3: Ion Implantation Defects and Shallow Junctions in Si and Ge; 1. Introduction; 2. Generation and Accumulation of Ion Implantation Damage; 3. Damage Evolution and Defect Agglomerates; 4. Role of Defects in Shallow Junction Formation in Si; 5. Role of Defects in Shallow Junction Formation in Ge; References; Chapter 4: Defective Solid-Phase Epitaxial Growth of Si; 1. Introduction; 1.1. Atomistic considerations.
- 1.2. Macroscopic considerations2. Role of Initial Growth Interface Morphology; 2.1. General observations of ""hairpin"" dislocations; 2.2. Very-low temperature annealing; 2.3. Stress-induced enhancement to hairpin dislocation formation; 3. ""Buried"" Amorphous Layers; 3.1. Clamshell defects for other wafer orientations; 4. Substrate Orientation Effects; 4.1. Stacking sequence variation with substrate orientation; 4.2. Observations of SPEG on (111) wafers; 5. Stressed SPEG Resulting from Impurities; 5.1. Impurity generating tensile stress (C); 5.2. Impurity generating compressive stress (Ge)
- 6. Externally Stressed SPEG6.1. Growth interface (in)stability and defectiveness; 6.2. Origins and driving forces; 7. Interaction of the Growth Interface with A SiOx Region; 7.1. Growth interface termination on one side; 7.2. Growth interface termination on two sides; 7.3. SiOx layer extent and growth interface pinning; 8. Defects Occurring at Mask Edges; 8.1. Typical mask-edge defect structure; 8.2. Simultaneous presence of stacking faults and perfect dislocations; 8.3. Growth interface templating and impingement; 8.4. Proximity of initial growth interface to wafer surface.