Properties of crystalline silicon /

Bibliographic Details
Call Number:Libro Electrónico
Corporate Author: INSPEC (Information service)
Other Authors: Hull, Robert, 1959-
Format: Electronic eBook
Language:Inglés
Published: London : INSPEC, the Institution of Electrical Engineers, ©1999.
Series:EMIS datareviews series ; no. 20.
Subjects:
Silicon.
Silicium.
silicon.
Online Access:Texto completo
Table of Contents:
  • Melt growth / edited by T. Abe
  • Epitacxial growth / edited by J.C. Bean
  • Structural and mechanical properties / edited by A. George
  • Thermal properties / edited by M.R. Brozel
  • Surface properties and cleaning / edited by R.J. Nemanich
  • Structural modelling / edited by M. Heggie
  • Band structure / edited by R.J. Turton
  • Electrical properties / edited by S.H. Jones
  • Impurities in silicon / edited by S.J. Pearson
  • Dopants in silicon / edited by K. Jones
  • Defect levels in silicon / edited by H. Godfrey
  • Optical properties / edited by D.E. Aspnes
  • Photoconductivity and photogenerated carriers / edited by M. Willander
  • Implantation/irradiation of silicon / edited by R. Elliman
  • Gettering / edited by E.R. Weber
  • Etching / edited by K.R. Williams
  • Metal-silicon contacts / edited by L. Schowalter
  • Silicon on insulator technology / edited by S.S. Iyer.

Similar Items