Transport in semiconductor mesoscopic devices /

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This textbook introduces the physics and applications of transport in mesoscopic devices and nanoscale electronic systems and devices. This expanded second edition is fully updated and contains the latest research in the field, including nano-devices for qubits, from both silicon quantum dots and su...

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Detalles Bibliográficos
Clasificación:Libro Electrónico
Autor principal: Ferry, David K. (Autor)
Formato: Electrónico eBook
Idioma:Inglés
Publicado: Bristol [England] (Temple Circus, Temple Way, Bristol BS1 6HG, UK) : IOP Publishing, [2020]
Edición:Second edition.
Colección:IOP ebooks. 2020 collection.
Temas:
Electron transport.
Semiconductors.
Nanostructured materials > Electric properties.
Nanostructures > Electric properties.
Mesoscopic phenomena (Physics)
Materials / States of matter.
TECHNOLOGY & ENGINEERING / Electronics / Semiconductors.
Acceso en línea:Texto completo
Tabla de Contenidos:
  • 1. The world of nanoelectronics
  • 1.1. Moore's law
  • 1.2. Nanostructures
  • 1.3. Some electronic length and time scales
  • 1.4. Heterostructures for mesoscopic devices
  • 1.5. Superconductors
  • 1.6. Bits and qubits
  • 1.7. Some notes on fabrication
  • 1.8. Bottom-up fabrication
  • 2. Wires and channels
  • 2.1. The quantum point contact
  • 2.2. The density of states
  • 2.3. The Landauer formula
  • 2.4. Beyond the simple theory for the QPC
  • 2.5. Simulating the channel : the scattering matrix
  • 2.6. Simulating the channel : recursive Green's functions
  • Appendix A : Coupled quantum and Poisson problems
  • Appendix B : The harmonic oscillator
  • 3. The Aharonov-Bohm effect
  • 3.1. Simple gauge theory of the AB effect
  • 3.2. Temperature dependence of the AB effect
  • 3.3. The AB effect in other structures
  • 3.4. Gated AB rings
  • 3.5. The electrostatic AB effect
  • 3.6. The AAS effect
  • 3.7. Weak localization
  • 3.8. Graphene rings
  • Appendix C : The gauge in field theory
  • 4. Layered compounds
  • 4.1. Graphene
  • 4.2. Carbon nanotubes
  • 4.3. Topological insulators
  • 4.4. The metal chalcogenides
  • 5. Localization and fluctuations
  • 5.1. Localization of electronic states
  • 5.2. Conductivity
  • 5.3. Conductance fluctuations
  • 5.4. Correlation functions
  • 5.5. Phase-braking time
  • 6. The quantum Hall effect
  • 6.1. The Shubnikov-de Haas effect
  • 6.2. The quantum Hall effect
  • 6.3. The Büttiker-Landauer approach
  • 6.4. The fractional quantum Hall effect
  • 6.5. Composite fermions
  • 7. Spin
  • 7.1. The spin Hall effect
  • 7.2. Spin injection
  • 7.3. Spin currents in nanowires
  • 7.4. Spin qubits
  • 7.5. Spin relaxation
  • Appendix D : Spin angular momentum
  • Appendix E : The Bloch sphere
  • 8. Tunnel devices
  • 8.1. Coulomb blockade
  • 8.2. Single-electron structures
  • 8.3. Quantum dots and qubits
  • 8.4. The Josephson qubits
  • Appendix F : Klein tunneling
  • Appendix G : The Darwin-Fock spectrum
  • 9. Open quantum dots
  • 9.1. Conductance fluctuations in open quantum dots
  • 9.2. Einselection and the environment
  • 9.3. Imaging the pointer state scar
  • 10. Hot carriers in mesoscopic devices
  • 10.1. Energy-loss rates
  • 10.2. The energy-relaxation time
  • 10.3. Nonlinear transport.

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