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Wide bandgap semiconductor-based electronics /
Advances in wide bandgap semiconductor materials are enabling the development of a new generation of power semiconductor devices that far exceed the performance of silicon-based devices. These technologies offer potential breakthrough performance for a wide range of applications, including high-powe...
| Clasificación: | Libro Electrónico |
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| Otros Autores: | , |
| Formato: | Electrónico eBook |
| Idioma: | Inglés |
| Publicado: |
Bristol [England] (Temple Circus, Temple Way, Bristol BS1 6HG, UK) :
IOP Publishing,
[2020]
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| Colección: | IOP ebooks. 2020 collection.
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| Temas: | |
| Acceso en línea: | Texto completo |
Tabla de Contenidos:
- part I. Gallium oxide. 1. Low-dimensional [beta]-Ga2O3 semiconductor devices / Suhyun Kim, Jinho Bae, Janghyuk Kim and Jihyun Kim
- 2. [beta]-Ga2O3 power field-effect transistors / Hang Dong, Guangwei Xu, Xuanze Zhou, Wenhao Xiong, Xueqiang Xiang, Weibing Hao, Shibing Long and Ming Liu
- 3. Beta gallium oxide ([beta]-Ga2O3) nanomechanical transducers : fundamentals, devices, and applications / Xu-Qian Zheng and Philip X.-L. Feng
- 4. Epitaxial growth of monoclinic gallium oxide using molecular beam epitaxy / Mahitosh Biswas and Elaheh Ahmadi
- 5. Defects and carrier lifetimes in Ga2O3 / E.B. Yakimov and A.Y. Polyakov
- 6. Breakdown in Ga2O3 rectifiers--the role of edge termination and impact ionization / Yu-Te Liao, Minghan Xian, Randy Elhassani, Patrick Carey IV, Chaker Fares, Fan Ren, Marko Tadjer and S.J. Pearton
- 7. Radiation damage in Ga2O3 materials and devices / S.J. Pearton, Fan Ren, Jihyun Kim, Michael Stavola and Alexander Y. Polyakov
- 8. Optical properties of Ga2O3 nanostructures / Manuel Alonso-Orts, Emilio Nogales and Bianchi Méndez
- 9. Band alignment of various dielectrics on Ga2O3, (AlxGa1-x)2O3, and (InxGa1-x)2O3 / C. Fares, F. Ren, Max Kneiss, Holger von Wenckstern, Marius Grundmann and S.J. Pearton
- part II. Gallium nitride/aluminum nitride. 10. The effect of growth parameters on the residual carbon concentration in GaN high electron mobility transistors : theory, modeling, and experiments / Indraneel Sanyal and Jen-Inn Chyi
- 11. High Al-content AlGaN-based HEMTs / Albert G. Baca, B.A. Klein, A.M. Armstrong, A.A. Allerman, E.A. Douglas and R.J. Kaplar
- 12. Understanding interfaces for homoepitaxial GaN growth / Jennifer Hite and Michael A. Mastro
- 13. Gas sensors based on wide bandgap semiconductors / Kwang Hyeon Baik and Soohwan Jang
- 14. Modeling of AlGaN/GaN pH sensors / Madeline Esposito, Erin Patrick and Mark E. Law
- 15. The potential and challenges of in situ microscopy of electronic devices and materials / Zahabul Islam, Nicholas Glavin and Aman Haque
- 16. Vertical GaN-on-GaN power devices / Houqiang Fu, Kai Fu and Yuji Zhao
- 17. Electric-double-layer-modulated AlGaN/GaN high electron mobility transistors (HEMTs) for biomedical detection / Yu-Lin Wang and Chang-Run Wu
- 18. Irradiation effects on high aluminum content AlGaN channel devices / Patrick Carey, Fan Ren, Jinho Bae, Jihyun Kim and Stephen Pearton
- part III. Zinc oxide. 19. BeMgZnO wide bandgap quaternary alloy semiconductor / Kai Ding, Vitaliy Avrutin, Natalia Izyumskaya, Ümit Özgür and Hadis Morkoç
- part IV. Boron nitride. 20. Growth and properties of hexagonal boron nitride (h-BN) based alloys and quantum wells / Q.W Wang, J. Li, J.Y. Lin and H.X. Jiang
- part V. Diamond. 21. Recent advances in SiC/diamond composite devices / Debarati Mukherjee, Miguel Neto, Filipe J. Oliveira, Rui F. Silva, Luiz Pereira, Shlomo Rotter and Joana C. Mendes.