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Wide bandgap semiconductor-based electronics /
Advances in wide bandgap semiconductor materials are enabling the development of a new generation of power semiconductor devices that far exceed the performance of silicon-based devices. These technologies offer potential breakthrough performance for a wide range of applications, including high-powe...
| Clasificación: | Libro Electrónico |
|---|---|
| Otros Autores: | , |
| Formato: | Electrónico eBook |
| Idioma: | Inglés |
| Publicado: |
Bristol [England] (Temple Circus, Temple Way, Bristol BS1 6HG, UK) :
IOP Publishing,
[2020]
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| Colección: | IOP ebooks. 2020 collection.
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| Temas: | |
| Acceso en línea: | Texto completo |
MARC
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|---|---|---|---|
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| 003 | IOP | ||
| 005 | 20201005101458.0 | ||
| 006 | m eo d | ||
| 007 | cr cn |||m|||a | ||
| 008 | 201005s2020 enka ob 000 0 eng d | ||
| 020 | |a 9780750325165 |q ebook | ||
| 020 | |a 9780750325158 |q mobi | ||
| 020 | |z 9780750325141 |q print | ||
| 020 | |z 9780750325172 |q myPrint | ||
| 024 | 7 | |a 10.1088/978-0-7503-2516-5 |2 doi | |
| 035 | |a (CaBNVSL)thg00082052 | ||
| 035 | |a (OCoLC)1199054232 | ||
| 040 | |a CaBNVSL |b eng |e rda |c CaBNVSL |d CaBNVSL | ||
| 050 | 4 | |a TK7871.85 |b .W543 2020eb | |
| 072 | 7 | |a TJFD |2 bicssc | |
| 072 | 7 | |a TEC008090 |2 bisacsh | |
| 082 | 0 | 4 | |a 621.3815/2 |2 23 |
| 245 | 0 | 0 | |a Wide bandgap semiconductor-based electronics / |c edited by Fan Ren and Stephen J. Pearton. |
| 264 | 1 | |a Bristol [England] (Temple Circus, Temple Way, Bristol BS1 6HG, UK) : |b IOP Publishing, |c [2020] | |
| 300 | |a 1 online resource (various pagings) : |b illustrations (some color). | ||
| 336 | |a text |2 rdacontent | ||
| 337 | |a electronic |2 isbdmedia | ||
| 338 | |a online resource |2 rdacarrier | ||
| 490 | 1 | |a IOP ebooks. [2020 collection] | |
| 500 | |a "Version: 20200901"--Title page verso. | ||
| 504 | |a Includes bibliographical references. | ||
| 505 | 0 | |a part I. Gallium oxide. 1. Low-dimensional [beta]-Ga2O3 semiconductor devices / Suhyun Kim, Jinho Bae, Janghyuk Kim and Jihyun Kim -- 2. [beta]-Ga2O3 power field-effect transistors / Hang Dong, Guangwei Xu, Xuanze Zhou, Wenhao Xiong, Xueqiang Xiang, Weibing Hao, Shibing Long and Ming Liu -- 3. Beta gallium oxide ([beta]-Ga2O3) nanomechanical transducers : fundamentals, devices, and applications / Xu-Qian Zheng and Philip X.-L. Feng -- 4. Epitaxial growth of monoclinic gallium oxide using molecular beam epitaxy / Mahitosh Biswas and Elaheh Ahmadi -- 5. Defects and carrier lifetimes in Ga2O3 / E.B. Yakimov and A.Y. Polyakov -- 6. Breakdown in Ga2O3 rectifiers--the role of edge termination and impact ionization / Yu-Te Liao, Minghan Xian, Randy Elhassani, Patrick Carey IV, Chaker Fares, Fan Ren, Marko Tadjer and S.J. Pearton -- 7. Radiation damage in Ga2O3 materials and devices / S.J. Pearton, Fan Ren, Jihyun Kim, Michael Stavola and Alexander Y. Polyakov -- 8. Optical properties of Ga2O3 nanostructures / Manuel Alonso-Orts, Emilio Nogales and Bianchi Méndez -- 9. Band alignment of various dielectrics on Ga2O3, (AlxGa1-x)2O3, and (InxGa1-x)2O3 / C. Fares, F. Ren, Max Kneiss, Holger von Wenckstern, Marius Grundmann and S.J. Pearton | |
| 505 | 8 | |a part II. Gallium nitride/aluminum nitride. 10. The effect of growth parameters on the residual carbon concentration in GaN high electron mobility transistors : theory, modeling, and experiments / Indraneel Sanyal and Jen-Inn Chyi -- 11. High Al-content AlGaN-based HEMTs / Albert G. Baca, B.A. Klein, A.M. Armstrong, A.A. Allerman, E.A. Douglas and R.J. Kaplar -- 12. Understanding interfaces for homoepitaxial GaN growth / Jennifer Hite and Michael A. Mastro -- 13. Gas sensors based on wide bandgap semiconductors / Kwang Hyeon Baik and Soohwan Jang -- 14. Modeling of AlGaN/GaN pH sensors / Madeline Esposito, Erin Patrick and Mark E. Law -- 15. The potential and challenges of in situ microscopy of electronic devices and materials / Zahabul Islam, Nicholas Glavin and Aman Haque -- 16. Vertical GaN-on-GaN power devices / Houqiang Fu, Kai Fu and Yuji Zhao -- 17. Electric-double-layer-modulated AlGaN/GaN high electron mobility transistors (HEMTs) for biomedical detection / Yu-Lin Wang and Chang-Run Wu -- 18. Irradiation effects on high aluminum content AlGaN channel devices / Patrick Carey, Fan Ren, Jinho Bae, Jihyun Kim and Stephen Pearton | |
| 505 | 8 | |a part III. Zinc oxide. 19. BeMgZnO wide bandgap quaternary alloy semiconductor / Kai Ding, Vitaliy Avrutin, Natalia Izyumskaya, Ümit Özgür and Hadis Morkoç -- part IV. Boron nitride. 20. Growth and properties of hexagonal boron nitride (h-BN) based alloys and quantum wells / Q.W Wang, J. Li, J.Y. Lin and H.X. Jiang -- part V. Diamond. 21. Recent advances in SiC/diamond composite devices / Debarati Mukherjee, Miguel Neto, Filipe J. Oliveira, Rui F. Silva, Luiz Pereira, Shlomo Rotter and Joana C. Mendes. | |
| 520 | 3 | |a Advances in wide bandgap semiconductor materials are enabling the development of a new generation of power semiconductor devices that far exceed the performance of silicon-based devices. These technologies offer potential breakthrough performance for a wide range of applications, including high-power and RF electronics, deep-UV optoelectronics, quantum information and extreme-environment applications. This reference text provides comprehensive coverage of the challenges and latest research in wide and ultra-wide bandgap semiconductors. Leading researchers from around the world provide reviews on the latest development of materials and devices in these systems. The book is an essential reference for researchers and practitioners in the field of wide bandgap semiconductors and power electronics, and valuable supplementary reading for advanced courses in these areas. | |
| 521 | |a Researchers in the field of wide bandgap semiconductors. | ||
| 530 | |a Also available in print. | ||
| 538 | |a Mode of access: World Wide Web. | ||
| 538 | |a System requirements: Adobe Acrobat Reader, EPUB reader, or Kindle reader. | ||
| 545 | |a Fan Ren is a distinguished professor in the Department of Chemical Engineering at the University of Florida. Professor Ren is a fellow of the American Physical Society, Electrochemical Society, Materials Research Society, Society of Photographic Instrumentation Engineers and American Vacuum Society. He won a Teacher and Scholar Award from the University of Florida in 2014 and the Gordon E. Moore Medal for Outstanding Achievement in Solid State Science and Technology from the Electrochemical Society in 2013. Stephen J Pearton is a distinguished professor in the Department of Materials Science and Engineering at the University of Florida. Professor Pearton is a fellow of the International Society for Optics and Photonics, American Physical Society, Materials Research Society, American Vacuum Society, IEEE, Electrochemical Society and TMS. He has won awards from the Electrochemical Society, American Vacuum Society, American Physical Society, IEEE and TMS. | ||
| 588 | 0 | |a Title from PDF title page (viewed on October 5, 2020). | |
| 650 | 0 | |a Semiconductors |x Materials. | |
| 650 | 0 | |a Wide gap semiconductors |x Materials. | |
| 650 | 0 | |a Power semiconductors |x Materials. | |
| 650 | 0 | |a Gallium arsenide semiconductors. | |
| 650 | 0 | |a Nitrides. | |
| 650 | 7 | |a Electronic devices & materials. |2 bicssc | |
| 650 | 7 | |a TECHNOLOGY & ENGINEERING / Electronics / Semiconductors. |2 bisacsh | |
| 700 | 1 | |a Ren, F., |e editor. | |
| 700 | 1 | |a Pearton, S. J., |e editor. | |
| 710 | 2 | |a Institute of Physics (Great Britain), |e publisher. | |
| 776 | 0 | 8 | |i Print version: |z 9780750325141 |z 9780750325172 |
| 830 | 0 | |a IOP ebooks. |p 2020 collection. | |
| 856 | 4 | 0 | |u https://iopscience.uam.elogim.com/book/978-0-7503-2516-5 |z Texto completo |