The formation of structural imperfections in semiconductor silicon /

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"Today, it is difficult to imagine all spheres of human activity without personal computers, solid-state electronic devices, micro- and nanoelectronics, photoconverters, and mobile communication devices. The basic material of modern electronics and for all of these industries is semiconductor s...

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Bibliographic Details
Call Number:Libro Electrónico
Main Authors: Talanin, V. I. (Vitaliĭ Igorʹevich) (Author), Talanin, I. E. (Igor Evgenievich) (Author)
Format: Electronic eBook
Language:Inglés
Published: Newcastle upon Tyne, UK : Cambridge Scholars Publishing, 2018.
Subjects:
Silicon > Structure.
Semiconductors > Impurity distribution.
Semiconductors > Materials.
Silicium > Structure.
Semi-conducteurs > Diffusion des impuretés.
Semi-conducteurs > Matériaux.
Condensed matter physics (liquid state & solid state physics)
Materials science.
Mathematical modelling.
TECHNOLOGY & ENGINEERING > Mechanical.
Semiconductors > Impurity distribution
Semiconductors > Materials
Online Access:Texto completo
Table of Contents:
  • Chapter one. Growth of dislocation-free silicon single crystals from melt and defect formation
  • Chapter two. Physical modeling of defect formation processes in dislocation-free single crystals of silicon
  • Chapter three. Physical basis of a heterogenous (two-stage) model of grown-in microdefect formation
  • Chapter four. High-temperature precipitation of impurity in dislocation-free silicon single crystals
  • Chapter five. The formation of microvoids and interstitial dislocation loops during crystal cooling after growing
  • Chapter six. General approach to the engineering of defects in semiconductor silicon.

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