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Silicon carbide and related materials 2010 : selected, peer reviewed papers from the 8th European Conference on Silicon Carbide and Related Materials (ECSCRM 2010), 29 August-2 September 2010, Sundvolden Conference Center, held in Oslo, Norway /
This volume contains the proceedings of the 8th European Conference on Silicon Carbide and Related Materials (ECSCRM 2010), held in Oslo (Sundvolden Conference Centre), Norway, on August 29th - September 2nd. The editions of ECSCRM have developed over the years and, today, ECSCRM is the leading Euro...
| Clasificación: | Libro Electrónico |
|---|---|
| Autor Corporativo: | |
| Otros Autores: | , , |
| Formato: | Electrónico Congresos, conferencias eBook |
| Idioma: | Inglés |
| Publicado: |
Durnten-Zurich, Switzerland :
Trans Tech Publications,
2011.
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| Colección: | Materials science forum ;
v. 679-680. |
| Temas: | |
| Acceso en línea: | Texto completo |
Tabla de Contenidos:
- Silicon Carbide and Related Materials 2010; Committees and Preface; Table of Contents; Chapter 1: SIC Growth; 1.1 Bulk Growth; Enlargement Growth of Large 4H-SiC Bulk Single Crystal; Reducing Stacking Faults in Highly Doped N-Type 4H-SiC Crystal; On Application of Sublimation Epitaxy to Growth of Bulk 3C-SiC Crystals; Experimental Verification of a Novel System for the Growth of SiC Single Crystals; Quality Investigation of 3C-SiC Crystals Grown by CF-PVT Technique; Polytype Stability of 4H-SiC Seed Crystal on Solution Growth.
- Defect Evaluation of SiC Crystal Grown by Solution Method: The Study by Synchrotron X-Ray Topography and Etching MethodEffect of Low Frequency Magnetic Field on SiC Solution Growth; Crystal Growth of 4H-SiC on 6H-SiC by Traveling Solvent Method; The Effect of Process Parameters on 4H-SiC Single Crystal Grown by a PVT Method; Effect of the Seed Polarity for High Quality 4H-SiC Crystal Grown on 6H-SiC Seed by PVT Method; 1.2 Epitaxial Growth; Evolution of Extended Defects during Epitaxial Growths: A Monte Carlo Study; 4H-SiC Homoepitaxial Growth on Substrates with Different Off-Cut Directions.
- Atomistic Simulation of SiC Growth at the SiC(0001)/Si1-XCx Interface by the Monte Carlo MethodPolarity Control of CVD Grown 3C-SiC on Si(111); Epitaxial Growth on 4H-SiC on-Axis, 0.5°, 1.25°, 2°, 4°, 8° Off-Axis Substrates
- Defects Analysis and Reduction; Investigation of the Growth of 3C-SiC on Si by Vapor-Liquid-Solid (VLS) Transport; Geometrical Control of 3C and 6H-SiC Nucleation on Low Off-Axis Substrates; Epitaxial Growth of 3C-SiC on Si Substrates by Atmospheric Hot Wall CVD Using Hexamethyledisilane[(CH3)6Si2]; Investigation of 3C-SiC Lateral Growth on 4H-SiC Mesas.
- High Growth Rate with Reduced Surface Roughness during On-Axis Homoepitaxial Growth of 4H-SiCGrowth of 4H- and 3C-SiC Epitaxial Layers on 4H-SiC Step-Free Mesas; 4H-SiC Epitaxy with Very Smooth Surface and Low Basal Plane Dislocation on 4 Degree Off-Axis Wafer; Generation of Void-Like Structures during Hot-Hydrogen Etching of Si Substrates for 3C-SiC Epitaxy; Chaper 2: SIC Characterization; 2.1 Fundamental and Structural Properties; Advanced Stress Analysis by Micro-Structures Realization on High Quality Hetero-Epitaxial 3C-SiC for MEMS Application.