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Defects and diffusion in semiconductors : an annual retrospective XIV /
A study was made of the diffusion of Al in AlAs/GaAs distributed Bragg-reflectors using the high angle annular dark field scanning transmission electron microscopy intensity. The measured intensity was normalized to the intensity of the incoming electron beam using a detector scan. The normalized in...
| Call Number: | Libro Electrónico |
|---|---|
| Other Authors: | |
| Format: | Electronic eBook |
| Language: | Inglés |
| Published: |
Durnten-Zurich :
TTP,
[2012]
|
| Series: | Diffusion and defect data. Defect and diffusion forum ;
v. 332. |
| Subjects: | |
| Online Access: | Texto completo |