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Defects and diffusion in semiconductors : an annual retrospective XIV /
A study was made of the diffusion of Al in AlAs/GaAs distributed Bragg-reflectors using the high angle annular dark field scanning transmission electron microscopy intensity. The measured intensity was normalized to the intensity of the incoming electron beam using a detector scan. The normalized in...
| Clasificación: | Libro Electrónico |
|---|---|
| Otros Autores: | |
| Formato: | Electrónico eBook |
| Idioma: | Inglés |
| Publicado: |
Durnten-Zurich :
TTP,
[2012]
|
| Colección: | Diffusion and defect data. Defect and diffusion forum ;
v. 332. |
| Temas: | |
| Acceso en línea: | Texto completo |
MARC
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| 130 | 0 | |a Defects and diffusion in semiconductors (Annual retrospective XIV) | |
| 245 | 1 | 0 | |a Defects and diffusion in semiconductors : |b an annual retrospective XIV / |c edited by D.J. Fisher. |
| 246 | 3 | |a Defects and diffusion in semiconductors XIV | |
| 264 | 1 | |a Durnten-Zurich : |b TTP, |c [2012] | |
| 300 | |a 1 online resource (vii, 243 pages) : |b illustrations (black and white) | ||
| 336 | |a text |b txt |2 rdacontent | ||
| 337 | |a computer |b c |2 rdamedia | ||
| 338 | |a online resource |b cr |2 rdacarrier | ||
| 490 | 1 | |a Defect and diffusion forum, |x 1012-0386 ; |v v. 332 | |
| 500 | |a Includes abstracts of papers published in scientific literature. | ||
| 504 | |a Includes bibliographical references and indexes. | ||
| 588 | 0 | |a Print version record. | |
| 520 | |a A study was made of the diffusion of Al in AlAs/GaAs distributed Bragg-reflectors using the high angle annular dark field scanning transmission electron microscopy intensity. The measured intensity was normalized to the intensity of the incoming electron beam using a detector scan. The normalized intensity could be directly compared with a set of frozen lattice simulations yielding specimen thickness in regions with known composition or concentration in regions with known thickness. The thickness was evaluated both from GaAs and AlAs regions yielding that the specimen was about 15nm thinner in AlAs regions due to oxidation. For the concentration evaluation the thickness was derived from GaAs regions and concentrations up to 1.2 were found due to the overestimated thickness. Concentration profiles were scaled down to 1.0 and fitted to the solution of Fick's laws Temporary description, more details to follow. | ||
| 590 | |a eBooks on EBSCOhost |b EBSCO eBook Subscription Academic Collection - Worldwide | ||
| 650 | 0 | |a Semiconductors |x Defects. | |
| 650 | 0 | |a Semiconductors |x Diffusion. | |
| 650 | 6 | |a Semi-conducteurs |x Défauts. | |
| 650 | 7 | |a TECHNOLOGY & ENGINEERING |x Electronics |x Semiconductors. |2 bisacsh | |
| 650 | 7 | |a TECHNOLOGY & ENGINEERING |x Electronics |x Solid State. |2 bisacsh | |
| 650 | 7 | |a Semiconductors |x Defects. |2 fast |0 (OCoLC)fst01112211 | |
| 650 | 7 | |a Semiconductors |x Diffusion. |2 fast |0 (OCoLC)fst01112215 | |
| 700 | 1 | |a Fisher, D. J., |e editor. | |
| 776 | 0 | 8 | |i Print version: |t Defects and diffusion in semiconductors |w (OCoLC)826657585 |
| 830 | 0 | |a Diffusion and defect data. |n Pt. A, |p Defect and diffusion forum ; |v v. 332. | |
| 856 | 4 | 0 | |u https://ebsco.uam.elogim.com/login.aspx?direct=true&scope=site&db=nlebk&AN=517432 |z Texto completo |
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