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III-nitride devices and nanoengineering /
Devices, nanoscale science and technologies based on GaN and related materials, have achieved great developments in recent years. New GaN-based devices such as UV detectors, fast p-HEMT and microwave devices are developed far more superior than other semiconductor materials-based devices. Written by...
| Clasificación: | Libro Electrónico |
|---|---|
| Otros Autores: | |
| Formato: | Electrónico eBook |
| Idioma: | Inglés |
| Publicado: |
London :
Imperial College Press,
©2008.
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| Temas: | |
| Acceso en línea: | Texto completo |
MARC
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| 245 | 0 | 0 | |a III-nitride devices and nanoengineering / |c Zhe Chuan Feng, editor. |
| 260 | |a London : |b Imperial College Press, |c ©2008. | ||
| 300 | |a 1 online resource (xiv, 462 pages) : |b illustrations | ||
| 336 | |a text |b txt |2 rdacontent | ||
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| 504 | |a Includes bibliographical references. | ||
| 588 | 0 | |a Print version record. | |
| 505 | 0 | |a Ch. 1. An overview of the development of major light sources: from light bulbs to solid state lighting. 1. Introduction. 2. Incandescence light bulbs. 3. Fluorescence light. 4. Coherent light sources: semiconductor lasers. 5. GaN-based blue and white LED. 6. DOE ALITE 1995. 7. Japan MITI's "21st Century Solid State Lighting Project" 1998. 8. USA Next Generation Lighting Initiative Alliance (NGLIA). 9. China's National SSL Program 2006. 10. Taiwan's solid state lighting program -- ch. 2. High pressure bulk crystal growth of (Ga, A)N. 1. Introduction. 2. The group-III nitrides AlN, GaN and InN. 3. Growth of group-III nitride bulk single crystals. 4. Results and discussion. 5. Conclusions and outlook -- ch. 3. Structural and optical investigation of InGaN/GaN multiple quantum well light emitting diodes grown by metalorganic chemical vapor deposition. 1. Introduction. 2. Experimental. 3. Structural properties of InGaN/GaN MQWs. 4. Optical properties of InGaN/GaN MQW LEDs. 5. Special electron microscopy of InGAN/GAN MQWs. 6. Special luminescence spectroscopy of InGaN/GaN MQWs. 7. Summary -- ch. 4. MOCVD growth and efficiency improvement for ultraviolet light emitting diodes. 1. Introduction. 2. Issue of InGaN, AllnGaN, AlGaN material system. 3. Substrate issue. 4. Defect control of epi-layer. 5. Internal quantum efficiency. 6. External quantum efficiency. 7. Summary -- ch. 5. Fabrication of GaN light emitting diodes by laser-off technique. 1. Introduction. 2. Current issues of conventional LED. 3. Major considerations and approaches for LLO of GaD LEDs. 4. Fabrication of LLO-LEDs -- ch. 6. High-resolution electron microscopy observations of GaN-based laser diodes. 1. Introduction. 2. HAADF-STEM imaging. 3. Structural and compositional analysis of MQW InGaN/GaN layers and strained AlGaN/GaN superlattices -- ch. 7. Growth and development of III-Nitride photodetectors. 1. Introduction. 2. Visible-blind photodetectors. 3. Solar-blind photodetectors. 4. Conclusion -- ch. 8. Laser diodes grown on bulk GaN substrate. 1. Introduction. 2. GaN substrates for laser diodes applications. 3. Homoepitaxial MOVPE growth of laser structures on bulk GaN substrates. 4. Laser diodes grown on bulk GaN by molecular beam epitaxy. 5. Performance of nitride laser diodes grown on bulk gallium nitride substrate. 6. Crystallographic defects in laser diode structures. 7. Reliability of nitride laser diodes -- ch. 9. III-Nitride lighting emitting diodes on Si. Introduction. 2. Growth. 3. Recent development of the LEDs on Si. 4. Conclusion -- ch 10. Nitride microdisplay and micro-scale light emitting diode arrays. 1. Introduction. 2. Light extraction in nitride materials. 3. Micron-scale light emitting diodes. 4. Micro-LED processing. 5. Micro-displays. 6. Interconnected micro-LEDs. 7. Micro-optics and its integration to micro-LEDs. 8. Novel geometry and configuration of micro-LEDs. 9. Applications of micro-LED arrays. 10. The future of micro-LEDs -- ch. 11. III-Nitride films and devices on lithium metal oxides by molecular beam epitaxy. 1. Introduction. 2. III-Nitride optoelectronic devices on LiGaO[symbol]. 3. III-Nitride power transistor integration onto ferroelectric materials. 4. Conclusions and outlook -- ch. 12 III-Nitride light-emitting devices on patterned sapphire substrates. 1. Introduction. 2. Experimental details. 3. Results and discussion. 4. Conclusions and outlook -- ch. 13 Bandgap engineering of III-Nitride devices on low-defect substrates. 1. Introduction. Low-defect GaN and AlN substrates. 3. Light-emitting diodes and laser diodes. 4. Field-effect transistors. 5. Summary -- ch. 14. III-Nitride nano-materials: growth and properties. 1. Introduction. 2. Boron nitride nanostructures. 3. Gallium nitride nanostructures. 4. Aluminum nitride nanostructures. 5. Indium nitride nanostructures. 6. Ternary nitride alloy nanostructures and III-nitride nano-heterostructures. 7. Conclusions and outlook -- ch. 15. Recent trends indium nitride nanomaterials. 1. Introduction. 2. Synthesis of Indium Nitride nanomaterials. 3. Optical properties. 4. Electrical properties. 5. Applications. 6. Concluding remarks. | |
| 520 | |a Devices, nanoscale science and technologies based on GaN and related materials, have achieved great developments in recent years. New GaN-based devices such as UV detectors, fast p-HEMT and microwave devices are developed far more superior than other semiconductor materials-based devices. Written by renowned experts, the review chapters in this book cover the most important topics and achievements in recent years, discuss progress made by different groups, and suggest future directions. Each chapter also describes the basis of theory and experiment. This book is an invaluable resource for device design and processing engineers, material growers and evaluators, postgraduates and scientists as well as newcomers in the GaN field. | ||
| 590 | |a eBooks on EBSCOhost |b EBSCO eBook Subscription Academic Collection - Worldwide | ||
| 650 | 0 | |a Semiconductors |x Materials. | |
| 650 | 0 | |a Gallium nitride. | |
| 650 | 0 | |a Nanotechnology. | |
| 650 | 6 | |a Semi-conducteurs |x Matériaux. | |
| 650 | 6 | |a Nitrure de gallium. | |
| 650 | 6 | |a Nanotechnologie. | |
| 650 | 7 | |a TECHNOLOGY & ENGINEERING |x Electronics |x Semiconductors. |2 bisacsh | |
| 650 | 7 | |a TECHNOLOGY & ENGINEERING |x Electronics |x Solid State. |2 bisacsh | |
| 650 | 7 | |a Gallium nitride |2 fast | |
| 650 | 7 | |a Nanotechnology |2 fast | |
| 650 | 7 | |a Semiconductors |x Materials |2 fast | |
| 700 | 1 | |a Feng, Zhe Chuan. | |
| 776 | 0 | 8 | |i Print version: |t III-nitride devices and nanoengineering. |d London : Imperial College Press, ©2008 |z 1848162235 |w (DLC) 2008301441 |w (OCoLC)271771204 |
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