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Horizons in computer science research. Volume 2 /

Detalles Bibliográficos
Clasificación:Libro Electrónico
Formato: Electrónico eBook
Idioma:Inglés
Publicado: New York : Nova Science Publishers, ©2011.
Colección:Horizons in Computer Science.
Temas:
Acceso en línea:Texto completo

MARC

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245 0 0 |a Horizons in computer science research.  |n Volume 2 /  |c Thomas S. Clary, editor. 
260 |a New York :  |b Nova Science Publishers,  |c ©2011. 
300 |a 1 online resource (xii, 448 pages) :  |b illustrations. 
336 |a text  |b txt  |2 rdacontent 
337 |a computer  |b c  |2 rdamedia 
338 |a online resource  |b cr  |2 rdacarrier 
490 1 |a Horizons in Computer Science ;  |v v. 2 
500 |a Title from PDF title page (viewed on Mar. 28, 2012). 
504 |a Includes bibliographical references and index. 
505 0 |a ""HORIZONS IN COMPUTER SCIENCE RESEARCH VOLUME 2 ""; ""HORIZONS IN COMPUTER SCIENCE ""; ""HORIZONS IN COMPUTER SCIENCE RESEARCH VOLUME 2 ""; ""CONTENTS ""; ""PREFACE ""; ""WRAPPER DESIGN FOR CDMA SHARED BUS IN SOC ""; ""Abstract ""; ""1. Introduction ""; ""2. Taxonomy of On-Chip Communication ""; ""3. Shared on-Chip Communication Architecture ""; ""4. Interfacing IP Blocks into SoC Using Wrappers ""; ""5. Multiprocessor System Based on CDMA Shared System Bus ""; ""6. CDMA Wrapper Structure ""; ""6.1. Related Works on Bus-Based Wrappers "" 
505 8 |a ""6.2. Description of Wrapper Structure """"6.3. CDMA Coded Bus Transfer Operations ""; ""7. Design Dilemmas ""; ""8. Experiment Setup ""; ""8.1. Performance Metrics ""; ""Wrapper Performance Metrics ""; ""Data Transfer Latency Ratio ""; ""A. Write Operation ""; ""B. Read Operation ""; ""Metrics Q and R ""; ""9. Experimental Results ""; ""9.1. Wrapper Logic Performance in FPGA ""; ""Absolute Performance ""; ""Relative Performance ""; ""9.2. Data Transfer Latency Performance in FPGA ""; ""9.3. ASIC Implementation ""; ""10. Conclusion ""; ""Acknowledgments ""; ""References "" 
505 8 |a ""THE FLASH MEMORY BASED ON SILICON NITRIDE (SONOS) """"Abstract ""; ""1. Introduction ""; ""2. Two-Band Conduction Model in The Si3N4, the Drift- Diffusion Approximation ""; ""3. The Traps in the Si3N4 ""; ""3.1. Si Dangling Bond ""; ""3.2. Si-Si Bond ""; ""3.3. N Dangling Bond ""; ""4. Mechanism of the Trap Ionization ""; ""4.1. A Frenkel Model with Thermally Assisted Tunneling ""; ""4.2. The Multiphonon Mechanism Ionization ""; ""5. The Charge Transport in Si3N4. Experiment and Numerical Simulation ""; "" 6. The Threshold Voltage and the Memory Window "" 
505 8 |a ""7. Typical Write/Erase Characteristics of SONOS """"8. Retention ""; ""9. Optimization of Sonos ""; ""9.1. Using the High-K Dielectric as Blocking Oxide ""; ""9.2. Optimization of the Dielectric Constant of a Blocking Dielectric ""; ""9.3. Using the Triple (Sio2/Si3N4/Sio2) Dielectric as Tunnel Dielectric (BE-SONOS) ""; ""9.4. Using the Gate with Higher Work Function (Tan/Al2O3/Si3N4/Sio2/Si Structure) instead Poly-Si ""; ""9.5. Using Another Material with High Traps Concentration as Charge Storage Material instead of Si N "" 
505 8 |a ""10. The FLASH Memory Based on Semiconductors/Metal Nanoclusters Embedded in Dielectric """"11. Conclusions ""; ""Acknowledgments ""; ""References ""; "" TEACHING PROGRAMMING TO SECONDARY EDUCATION STUDENTS WITH A LEARNING ENVIRONMENT BASED ON „KAREL THE ROBOT‟: A PILOT STUDY IN A GREEK HIGH SCHOOL""; ""Abstract ""; ""1. Introduction ""; ""2. The Features of the Learning Environment Based on „Karel the Robot‟ ""; ""3. The Proposed Series of Lessons ""; ""3.1. First Didactical Hour: Presentation of the Microworld and the Basic Instructions "" 
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650 7 |a COMPUTERS  |x Computer Literacy.  |2 bisacsh 
650 7 |a COMPUTERS  |x Computer Science.  |2 bisacsh 
650 7 |a COMPUTERS  |x Data Processing.  |2 bisacsh 
650 7 |a COMPUTERS  |x Hardware  |x General.  |2 bisacsh 
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830 0 |a Horizons in Computer Science. 
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