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HeteroSiC & WASMPE 2011 : selected, peer reviewed papers from the 4th Workshop on Advanced Semiconductor Materials and Devices for Power Electronics Applications (HeteroSiC & WASMPE 2011), June 27-30, 2011, Tours, France /
The aim of this collection of peer-reviewed papers is to promote the open discussion of SiC hetero-epitaxy as related to the possibility of growing SiC on other materials and of growing various SiC polytypes so as to take advantage of the possibilities of band-gap engineering, These proceedings pres...
| Cote: | Libro Electrónico |
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| Autres auteurs: | |
| Format: | Électronique eBook |
| Langue: | Inglés |
| Publié: |
Switzerland :
Trans Tech Publications Ltd,
2012.
©2012 |
| Collection: | Materials science forum ;
v. 711. |
| Sujets: | |
| Accès en ligne: | Texto completo |
| Résumé: | The aim of this collection of peer-reviewed papers is to promote the open discussion of SiC hetero-epitaxy as related to the possibility of growing SiC on other materials and of growing various SiC polytypes so as to take advantage of the possibilities of band-gap engineering, These proceedings present the latest developments in Silicon Carbide, and the prospects for Gallium Nitride (GaN on Si, SiC, sapphire and free-standing) and Diamond power electronics. Finally, the progress made in Graphene technology, such as its introduction into devices and its relationship to SiC epitaxial material, is considered. |
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| Description matérielle: | 1 online resource : illustrations |
| Bibliographie: | Includes bibliographical references and index. |
| ISBN: | 9783038136712 3038136719 |
| ISSN: | 1662-9752 ; |