ISTFA '97 : proceedings of the 23rd International Symposium for Testing and Failure Analysis : 27-31 October, 1997, Santa Clara Convention center, Santa Clara, California /

Detalles Bibliográficos
Clasificación:Libro Electrónico
Autores Corporativos: International Symposium for Testing and Failure Analysis Santa Clara, Calif., ASM International
Otros Autores: Davidson, Grace M.
Formato: Electrónico Congresos, conferencias eBook
Idioma:Inglés
Publicado: Materials Park, OH : ASM International, ©1997.
Temas:
Electronics > Materials > Testing > Congresses.
Electronic apparatus and appliances > Testing > Congresses.
Appareils électroniques > Essais > Congrès.
TECHNOLOGY & ENGINEERING > Electronics > Circuits > General.
TECHNOLOGY & ENGINEERING > Electronics > Circuits > Integrated.
Electronic apparatus and appliances > Testing.
Electronics > Materials > Testing.
Conference papers and proceedings.
Acceso en línea:Texto completo
Tabla de Contenidos:
  • Preface
  • Table of Contents
  • 24th International Symposium for Testing and Failure Analysis
  • 25th International Symposium for Testing and Failure Analysis
  • 24th International Symposium for Testing and Failure Analysis â€Ø ISTFA ' 98
  • Experimental Figures for the Defect Coverage of looaVectors
  • A CAD- Based Approach to Failure Diagnosis of CMOSLSI with Single Fault Using Abnormal IOOQ
  • Test and Failure Analysis Implications of a Novel Inter-Bit Dependency in a Non- Volatile Memory
  • Analysis of a Latent Deep Submicron CMOS Device Isolation Leakage Mechanism
  • Scanning Fluorescent Microthermal ImagingTemperature Profiling with Highest Spatial and Temperature Resolution by Means of Scanning Thermal Microscopy (SThM)
  • Thermal and Optical Enhancements to Liquid Crystal Hot Spot Detection Methods
  • Application of Ba~kside Photo and Thermal Emission Microscopy Techniques to Advanced Memory Devices
  • Cross Sectioning with a Pivoting Sample Block
  • Gain Reduction in Silicon Phototransistors Induced by Metallization Mask Misalignment
  • Comparison Precision XTEM Specimen Preparation Techniques for Semiconductor Failure Analysis
  • Temperature-Dependent Electronic Circuit Analogy for Predicting Wire Temperature as a Function of CurrentThe Application of FIB Voltage-Contrast Technique Combining with TEM on Subtle Defect Analysis: Via Delamination After TC
  • The Usage of Focused Ion Beam Induced Deposition of Gold Film in Ie Device Modification and Repair
  • Failure Analysis Challenges of Surface Micromachined Accelerometers
  • Failure Analysis for Micro-Electrical- Mechanical Systems (MEMS)
  • Investigation of Multi- Level Metallization ULSls by Light Emission from the Back- Side and Front- Side of the ChipA Simple, Cost Effective, and Very Sensitive Alternative for Photon Emission Spectroscopy
  • Novel Failure Analysis Technique Light Induced State Transition (LIST) Method Using an OBIC System
  • An Application of Breakthrough Failure Analysis Techniques in Eliminating Silicon Dislocation Problem in Sub-Micron CMOS Devices
  • Characterization of Californium
  • 252 (2s2Cf) as a Laboratory Source of Radiation for Testing and Analysis of Semiconductor Devices
  • Dendritic Growth Failure of a Mesa DiodeInterpretation of Sudden Failures in Pump Laser Diodes
  • Through- Transmission Acoustic Inspection of Ball Grid Array (BGA) Packages
  • Moisture Detection Method in Ceramic Package by Slight Current Measurement
  • Laser Microchemical Technology: NewTools for Flip- Chip Debug and Failure Analysis
  • Single Contact Electron Beam Induced Current Microscopy for Failure Analysis of Integrated Circuits
  • Electrical and Chemical Characterization of FIB- Deposited Insulators

Ejemplares similares