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Breakdown phenomena in semiconductors and semiconductor devices /
Impact ionization, avalanche and breakdown phenomena form the basis of many very interesting and important semiconductor devices, such as avalanche photodiodes, avalanche transistors, suppressors, sharpening diodes (diodes with delayed breakdown), as well as IMPATT and TRAPATT diodes. In order to pr...
| Cote: | Libro Electrónico |
|---|---|
| Auteur principal: | |
| Autres auteurs: | , |
| Format: | Électronique eBook |
| Langue: | Inglés |
| Publié: |
New Jersey ; London :
World Scientific,
©2005.
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| Collection: | Selected topics in electronics and systems ;
v. 36. |
| Sujets: | |
| Accès en ligne: | Texto completo |
Table des matières:
- Preface; Contents; Chapter 1 Introductory Chapter; Chapter 2 Avalanche Multiplication; Chapter 3 Static Avalanche Breakdown; Chapter 4 Avalanche Injection; Chapter 5 Dynamic Breakdown; Conclusion; List of Symbols; Bibliography; Index; AUTHOR INDEX.