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SiC materials and devices. Volume 1 /
After many years of research and development, silicon carbide has emerged as one of the most important wide band gap semiconductors. The first commercial SiC devices - power switching Schottky diodes and high temperature MESFETs - are now on the market. This two-volume book gives a comprehensive, up...
| Cote: | Libro Electrónico |
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| Autres auteurs: | , , |
| Format: | Électronique eBook |
| Langue: | Inglés |
| Publié: |
New Jersey ; London :
World Scientific,
©2006.
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| Collection: | Selected topics in electronics and systems ;
v. 40. |
| Sujets: | |
| Accès en ligne: | Texto completo |
| Résumé: | After many years of research and development, silicon carbide has emerged as one of the most important wide band gap semiconductors. The first commercial SiC devices - power switching Schottky diodes and high temperature MESFETs - are now on the market. This two-volume book gives a comprehensive, up-to-date review of silicon carbide materials properties and devices. With contributions by recognized leaders in SiC technology and materials and device research, SiC Materials and Devices is essential reading for technologists, scientists and engineers who are working on silicon carbide or other wi. |
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| Description: | Material reprinted from International Journal of High Speed Electronics and Systems, v. 15 no. 4 (2005), with original paging in upper corner. |
| Description matérielle: | 1 online resource (v, 1033 pages) : illustrations |
| Bibliographie: | Includes bibliographical references. |
| ISBN: | 9789812773371 9812773371 |