GaN-based materials and devices : growth, fabrication, characterization and performance /
The unique materials properties of GaN-based semiconductors have stimulated a great deal of interest in research and development regarding nitride materials growth and optoelectronic and nitride-based electronic devices. High electron mobility and saturation velocity, high sheet carrier concentratio...
| Cote: | Libro Electrónico |
|---|---|
| Autres auteurs: | Shur, Michael, Davis, Robert F. (Robert Foster), 1942- |
| Format: | Électronique eBook |
| Langue: | Inglés |
| Publié: |
River Edge, N.J. ; London :
World Scientific.,
©2004.
|
| Collection: | Selected topics in electronics and systems ;
v. 33. |
| Sujets: | |
| Accès en ligne: | Texto completo |
Documents similaires
-
III-nitride devices and nanoengineering /
Publié: (2008) -
Nitride Semiconductor Devices : Fundamentals and Applications.
par: Morko?, Hadis
Publié: (2013) -
SOL-GEL SPIN COATING GROWTH OF GALLIUM NITRIDE THIN FILMS a simple, safe, and cheap approach.
par: FONG, CHEE YONG
Publié: (2019) -
Gallium nitride (GaN).
Publié: (1999) -
Roadmap for skutterudites and point defects in GaN /
Publié: (2022)


