Vertical GaN and SiC power devices /

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"This unique new resource provides a comparative introduction to vertical Gallium Nitride (GaN) and Silicon Carbide (SiC) power devices using real commercial device data, computer, and physical models. This book uses commercial examples from recent years and presents the design features of vari...

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Bibliographic Details
Call Number:Libro Electrónico
Main Author: Mochizuki, Kazuhiro (Author)
Format: Electronic eBook
Language:Inglés
Published: Boston ; London : Artech House, [2018]
Series:Artech House microwave library.
Subjects:
Microwave devices.
Power electronics.
Gallium nitride > Electric properties.
Silicon carbide > Electric properties.
Dispositifs à micro-ondes.
Électronique de puissance.
TECHNOLOGY & ENGINEERING > Mechanical.
Gallium nitride > Electric properties
Microwave devices
Power electronics
Silicon carbide > Electric properties
Online Access:Texto completo
Table of Contents:
  • 1. Vertical versus lateral power semiconductor devices
  • 2. Physical properties of GaN and SiC
  • 3. p-n junctions
  • 4. Effects of photon recycling
  • 5. Bulk crystal growth
  • 6. Epitaxial growth
  • 7. Fabrication processes
  • 8. Metal-semiconductor contacts and unipolar power diodes
  • 9. Metal-insulator-semiconductor capacitors and unipolar power-switching devices
  • 10. Bipolar power diodes and power-switching devices
  • 11. Edge terminations
  • 12. Reliability of vertical GaN and SiC power devices.

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