Physics and technology of crystalline oxide semiconductor CAAC-IGZO. Fundamentals /

Electronic devices based on oxide semiconductors are the focus of much attention, with crystalline materials generating huge commercial success. Indium-gallium-zinc oxide (IGZO) transistors have a higher mobility than amorphous silicon transistors, and an extremely low off-state current. C-axis alig...

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Detalles Bibliográficos
Clasificación:Libro Electrónico
Otros Autores: Yamazaki, Shunpei, 1942- (Editor ), Kimizuka, Noboru, 1940- (Editor )
Formato: Electrónico eBook
Idioma:Inglés
Publicado: Chichester, UK ; Hoboken, NJ : John Wiley & Sons, 2017.
Colección:Wiley SID series in display technology.
Temas:
Indium gallium zinc oxide.
Semiconductors > Materials.
Semiconductors > Characterization.
Semi-conducteurs > Matériaux.
Semi-conducteurs > Caractérisation.
TECHNOLOGY & ENGINEERING > Mechanical.
Indium gallium zinc oxide
Gallium compounds
Oxides
Semiconductors > Characterization
Semiconductors > Materials
Zinc compounds
Acceso en línea:Texto completo
Tabla de Contenidos:
  • Layered compounds in the In2O3-Ga2O3-ZnO system and related compounds in the ternary system
  • Systematic view of crystalline CAAC-IGZO and other crystalline IGZO thin films
  • Fundamental properties of IGZO
  • CAAC-IGZO field-effect transistor
  • Device application using CAAC-IGZO.

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