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MOCVD growth of GaN-based high electron mobility transistor structures /

Bibliographic Details
Call Number:Libro Electrónico
Main Author: Chen, Jr-Tai (Author)
Format: Electronic eBook
Language:Inglés
Published: Linköping, Sweden : Linköping University, 2015.
Series:Linköping studies in science and technology. Dissertations ; no. 1662.
Subjects:
Online Access:Texto completo
Description
Physical Description:1 online resource (81 pages) : illustrations (some color)
Bibliography:Includes bibliographical references.
ISBN:9789175190730
9175190737
ISSN:0345-7524 ;