GaN Transistors for Efficient Power Conversion.

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The first edition of GaN Transistors for Efficient Power Conversion was self-published by EPC in 2012, and is currently the only other book to discuss GaN transistor technology and specific applications for the technology. More than 1,200 copies of the first edition have been sold through Amazon or...

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Detalles Bibliográficos
Clasificación:Libro Electrónico
Autor principal: Lidow, Alex
Otros Autores: Strydom, Johan, De Rooij, Michael, Reusch, David
Formato: Electrónico eBook
Idioma:Inglés
Publicado: Hoboken : Wiley, 2014.
Edición:2nd ed.
Temas:
Field-effect transistors.
Gallium nitride.
Transistors à effet de champ.
Nitrure de gallium.
Field-effect transistors
Gallium nitride
Acceso en línea:Texto completo

MARC

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050 4 |a TK7871.95 .L384 2014 
082 0 4 |a 621.3815 
049 |a UAMI 
100 1 |a Lidow, Alex. 
245 1 0 |a GaN Transistors for Efficient Power Conversion. 
250 |a 2nd ed. 
260 |a Hoboken :  |b Wiley,  |c 2014. 
300 |a 1 online resource (269 pages) 
336 |a text  |b txt  |2 rdacontent 
337 |a computer  |b c  |2 rdamedia 
338 |a online resource  |b cr  |2 rdacarrier 
588 0 |a Print version record. 
505 0 |a GaN Transistors for Efficient Power Conversion; Contents; Foreword; Acknowledgments; 1 GaN Technology Overview; 1.1 Silicon Power MOSFETs 1976-2010; 1.2 The GaN Journey Begins; 1.3 Why Gallium Nitride?; 1.3.1 Band Gap (Eg); 1.3.2 Critical Field (Ecrit); 1.3.3 On-Resistance (RDS(on)); 1.3.4 The Two-Dimensional Electron Gas; 1.4 The Basic GaN Transistor Structure; 1.4.1 Recessed Gate Enhancement-Mode Structure; 1.4.2 Implanted Gate Enhancement-Mode Structure; 1.4.3 pGaN Gate Enhancement-Mode Structure; 1.4.4 Cascode Hybrid Enhancement-Mode Structure; 1.4.5 Reverse Conduction in HEMT Transistors. 
505 8 |a 1.5 Building a GaN Transistor1.5.1 Substrate Material Selection; 1.5.2 Growing the Heteroepitaxy; 1.5.3 Processing the Wafer; 1.5.4 Making Electrical Connection to the Outside World; 1.6 Summary; References; 2 GaN Transistor Electrical Characteristics; 2.1 Introduction; 2.2 Key Device Parameters; 2.2.1 Breakdown Voltage (BVDSS) and Leakage Current (IDSS); 2.2.2 On-Resistance (RDS(on)); 2.2.3 Threshold Voltage (VGS(th) or Vth); 2.3 Capacitance and Charge; 2.4 Reverse Conduction; 2.5 Thermal Resistance; 2.6 Transient Thermal Impedance; 2.7 Summary; References; 3 Driving GaN Transistors. 
505 8 |a 3.1 Introduction3.2 Gate Drive Voltage; 3.3 Bootstrapping and Floating Supplies; 3.4 dv/dt Immunity; 3.5 di/dt Immunity; 3.6 Ground Bounce; 3.7 Common Mode Current; 3.8 Gate Driver Edge Rate; 3.9 Driving Cascode GaN Devices; 3.10 Summary; References; 4 Layout Considerations for GaN Transistor Circuits; 4.1 Introduction; 4.2 Minimizing Parasitic Inductance; 4.3 Conventional Power Loop Designs; 4.4 Optimizing the Power Loop; 4.5 Paralleling GaN Transistors; 4.5.1 Paralleling GaN Transistors for a Single Switch; 4.5.2 Paralleling GaN Transistors for Half-Bridge Applications; 4.6 Summary. 
504 |a References5 Modeling and Measurement of GaN Transistors; 5.1 Introduction; 5.2 Electrical Modeling; 5.2.1 Basic Modeling; 5.2.2 Limitations of Basic Modeling; 5.2.3 Limitations of Circuit Modeling; 5.3 Thermal Modeling; 5.3.1 Improving Thermal Performance; 5.3.2 Modeling of Multiple Die; 5.3.3 Modeling of Complex Systems; 5.4 Measuring GaN Transistor Performance; 5.4.1 Voltage Measurement Requirements; 5.4.2 Current Measurement Requirement; 5.5 Summary; References; 6 Hard-Switching Topologies; 6.1 Introduction; 6.2 Hard-Switching Loss Analysis; 6.2.1 Switching Losses. 
505 8 |a 6.2.2 Output Capacitance (COSS) Losses6.2.3 Gate Charge (QG) Losses; 6.2.4 Reverse Conduction Losses (PSD); 6.2.5 Reverse Recovery (QRR) Losses; 6.2.6 Total Hard-Switching Losses; 6.2.7 Hard-Switching Figure of Merit; 6.3 External Factors Impacting Hard-Switching Losses; 6.3.1 Impact of Common-Source Inductance; 6.3.2 Impact of High Frequency Power-Loop Inductance on Device Losses; 6.4 Reducing Body Diode Conduction Losses in GaN Transistors; 6.5 Frequency Impact on Magnetics; 6.5.1 Transformers; 6.5.2 Inductors; 6.6 Buck Converter Example; 6.6.1 Output Capacitance Losses. 
500 |a 6.6.2 Gate Losses (PG). 
520 |a The first edition of GaN Transistors for Efficient Power Conversion was self-published by EPC in 2012, and is currently the only other book to discuss GaN transistor technology and specific applications for the technology. More than 1,200 copies of the first edition have been sold through Amazon or distributed to selected university professors, students and potential customers, and a simplified Chinese translation is also available. The second edition has expanded emphasis on applications for GaN transistors and design considerations. This textbook provides technical and application- 
590 |a ProQuest Ebook Central  |b Ebook Central Academic Complete 
650 0 |a Field-effect transistors. 
650 0 |a Gallium nitride. 
650 6 |a Transistors à effet de champ. 
650 6 |a Nitrure de gallium. 
650 7 |a Field-effect transistors  |2 fast 
650 7 |a Gallium nitride  |2 fast 
700 1 |a Strydom, Johan. 
700 1 |a De Rooij, Michael. 
700 1 |a Reusch, David. 
758 |i has work:  |a GaN transistors for efficient power conversion (Text)  |1 https://id.oclc.org/worldcat/entity/E39PCFMMXwjMkyMj9XhmrGTxH3  |4 https://id.oclc.org/worldcat/ontology/hasWork 
776 0 8 |i Print version:  |a Lidow, Alex.  |t GaN Transistors for Efficient Power Conversion.  |d Hoboken : Wiley, ©2014  |z 9781118844762 
856 4 0 |u https://ebookcentral.uam.elogim.com/lib/uam-ebooks/detail.action?docID=1724874  |z Texto completo 
994 |a 92  |b IZTAP 

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