Silicon carbide : new materials, production methods, and applications /

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Detalles Bibliográficos
Clasificación:Libro Electrónico
Otros Autores: Vanger, Sofia H.
Formato: Electrónico eBook
Idioma:Inglés
Publicado: New York : Nova Science Publishers, ©2011.
Colección:Materials science and technologies series.
Temas:
Silicon carbide.
Nanostructured materials.
Nanostructures
Nanomatériaux.
Nanostructured materials
Silicon carbide
Acceso en línea:Texto completo
Tabla de Contenidos:
  • SILICON CARBIDE: NEW MATERIALS, PRODUCTION METHODS AND APPLICATIONS; SILICON CARBIDE: NEW MATERIALS, PRODUCTION METHODS AND APPLICATIONS ; CONTENTS ; PREFACE ; ETCHING AND THIN FILM FORMATION OF SILICON CARBIDE USING HIGHLY REACTIVE GASES ; 1. Introduction; 1.1. Silicon Carbide ; 1.2. Dry Etching ; 1.3. Film Deposition ; 2. POLYCRYSTALLINE 3C-SILICON CARBIDE ETCHING USING CHLORINE TRIFLUORIDE GAS ; 2.1. Reactor and Processes Using Chlorine Trifluoride Gas ; 2.2. Etch Rate ; 2.3. Surface Morphology and Roughness; 2.4. Surface Chemical Condition and Etch Rate ; 2.5. Chemical Reactions.
  • 3. SINGLE-CRYSTALLINE 4H-SILICON CARBIDE ETCHING USING CHLORINE TRIFLUORIDE GAS 3.1. Substrate, Reactor and Process ; 3.2. Numerical Calculation of Etch Rate ; 3.3. Etch Rate ; 3.4. Surface Reaction Rate Constant ; 3.5. Etch Rate Behavior ; 3.6. Safe Design of Reactor System ; 3.7. Surface Morphology ; 3.8. Surface Morphology Behavior and Its Rate Process ; 3.9. Etch Pits and Crystalline Defect ; 4. POLYCRYSTALLINE SILICON CARBIDE FILM DEPOSITION USING MONOMETHYLSILANE GAS AT LOW TEMPERATURES ; 4.1. Reactor and Process ; 4.2. Thermal Decomposition of Monomethylsilane.
  • 4.3. Film Deposition from Monomethylsilane 4.4. Film Deposition from Monomethylsilane and Hydrogen Chloride ; 4.5. Chemical Reaction in Monomethylsilane and Hydrogen Chloride System ; 4.6. Film Deposition Rate ; 4.7. Surface Chemical Process ; 4.8. Hydrogen Chloride Gas Flow Rate and Silicon Carbide Film Thickness ; 4.9. Surface Morphology ; 4.10. Room Temperature Deposition ; 4.11. Robustness of Film Formed at Room Temperature; 4.12. Film Formation Mechanism at Room Temperature ; 5. SUMMARY ; ACKNOWLEDGMENTS ; REFERENCES.
  • SILICON CARBIDE PARTICULATE REINFORCED ALUMINUM ALLOYS MATRIX COMPOSITES FABRICATED BY SQUEEZE CASTING METHOD ABSTRACT ; 1. INTRODUCTION; 2. MATRIX MATERIALS AND REINFORCEMENTS ; 2.1. Matrix Materials ; 2.2. Reinforcements ; 3. PRODUCTION METHOD OF MMCS ; 3.1. Solid-Phase Processes; 3.1.1. Powder Metallurgy; 3.1.2. High Energy-High-Rate Process ; 3.2. Two Phase Processes ; 3.2.1. Spray Deposition ; 3.2.2. Rheocasting ; 3.2.3. Variable Co-Deposition of Multiphase Materials (VCM) ; 3.3. Liquid-Phase Processes ; Silicon Carbide, SiC ; Aluminum Oxide, Al2O3 ; 3.3.1. Sand and Die Casting.
  • 3.3.2. Centrifugal Casting Method 3.3.3. Compocasting ; 3.3.4. Pressure Casting ; 3.3.5. Investment Casting; 3.3.6. Vacuum Infiltration Process ; 3.3.7. Vortex Method ; 3.3.8. Squeeze Casting ; 4. PREPARATION AND PROPERTIES OF CAST ALUMINUM-CERAMIC PARTICLE REINFORCED MMCS ; 4.1. Wettability of SiC with Al and Al Alloys ; 4.2. Casting Fluidity ; 4.3. Effect of Pressure ; 5. PROPERTIES OF AL/SICP MMCS PRODUCED BY DIRECT SQUEEZE CASTING METHOD ; 5.1. Experimental Details ; 5.2. Results and Discussion ; 5.2.1. Microstructure ; 5.2.2. Density; 5.2.3. Hardness ; 5.2.4. Tensile Test Properties.

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