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Silicon Carbide Microelectromechanical Systems For Harsh Environments.
This unique book describes the science and technology of silicon carbide (SiC) microelectromechanical systems (MEMS), from the creation of SiC material to the formation of final system, through various expert contributions by several leading key figures in the field. The book contains high-quality u...
| Clasificación: | Libro Electrónico |
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| Otros Autores: | |
| Formato: | Electrónico eBook |
| Idioma: | Inglés |
| Publicado: |
World Scientific
2006.
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| Temas: | |
| Acceso en línea: | Texto completo |
Tabla de Contenidos:
- Preface ; 1 Introduction to Silicon Carbide (SiC) Microelectromechanical Systems (MEMS) ; 1 Introduction ; 2 SiC Material Properties ; 3 Making a Microelectromechanical (MEM) Device ; 3.1 Micromachining Processes ; 3.1.1 Bulk micromachining ; 3.1.2 Surface micromachining.
- 4 Surface Modification 5 Frequency Tuning of the SiC MEMS ; 6 Mechanical Testing of the MEMS ; 7 Application Examples ; 8 Summary ; References ; 2 Deposition Techniques for SiC MEMS ; 1 Introduction ; 2 Deposition Issues Related to SiC for MEMS.
- 3 Atmospheric Pressure Chemical Vapor Deposition 3.1 Epitaxial 3C-SiC Films ; 3.2 Polycrystalline 3C-SiC Films ; 4 Plasma Enhanced Chemical Vapor Deposition ; 5 Low Pressure Chemical Vapor Deposition ; 5.1 Overview ; 5.2 Epitaxial 3C-SiC Films ; 5.3 Polycrystalline 3C-SiC Films.
- 6 Doping ofLPCVDPoly-SiC Films 7 Other Deposition Methods ; 8 Conclusions ; References ; 3 Review of Issues Pertaining to the Development of Contacts to Silicon Carbide: 1996
- 2002 ; 1 Introduction ; 2 Thermal Stability ; 2.1 Thermal Stability of Ohmic Contacts.
- 2.2 Thermal Stability of Rectifying Contacts 3 Ohmic Contacts to p-type SiC ; 3.1 Introduction ; 3.2 Al-based Contacts ; 3.3 Al-free Contacts ; 4 Ohmic Contacts Using Nickel ; 4.1 Introduction ; 4.2 Thermodynamics ; 4.3 Phase Formation Sequence ; 4.4 Issues ; 4.5 Mechanisms.