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Gan-based Materials And Devices : Growth, Fabrication, Characterization And Performance.

The unique materials properties of GaN-based semiconductors havestimulated a great deal of interest in research and developmentregarding nitride materials growth and optoelectronic andnitride-based electronic devices. High electron mobility andsaturation velocity, high sheet carrier concentration at...

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Détails bibliographiques
Cote:Libro Electrónico
Auteur principal: Shur, Michael
Autres auteurs: Davis, Robert F. (Robert Foster), 1942-
Format: Électronique eBook
Langue:Inglés
Publié: Singapore : World Scientific, 2004.
Édition:33th ed.
Collection:Selected topics in electronics and systems ; v. 33.
Sujets:
Accès en ligne:Texto completo