Mosfet modeling for VLSI simulation : theory and practice /

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A reprint of the classic text, this book popularized compact modeling of electronic and semiconductor devices and components for college and graduate-school classrooms, and manufacturing engineering, over a decade ago. The first comprehensive book on MOS transistor compact modeling, it was the most...

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Detalles Bibliográficos
Clasificación:Libro Electrónico
Autor principal: Arora, N. (Narain), 1943-
Formato: Electrónico eBook
Idioma:Inglés
Publicado: New Jersey : World Scientific, ©2007.
Colección:International series on advances in solid state electronics and technology.
Temas:
Metal oxide semiconductor field-effect transistors.
Integrated circuits > Very large scale integration.
Integrated circuits > Very large scale integration > Computer simulation.
Transistors MOSFET.
Circuits intégrés à très grande échelle.
Circuits intégrés à très grande échelle > Simulation par ordinateur.
TECHNOLOGY & ENGINEERING > Electronics > Transistors.
Integrated circuits > Very large scale integration
Integrated circuits > Very large scale integration > Computer simulation
Metal oxide semiconductor field-effect transistors
Acceso en línea:Texto completo
Tabla de Contenidos:
  • Foreword; Preface; Contents; List of Symbols; Acronyms; 1 Overview; 2 Review of Basic Semiconductor and pn Junction Theory; 3 MOS Transistor Structure and Operation; 4 MOS Capacitor; 5 Threshold Voltage; 6 MOSFET DC Model; 7 Dynamic Model; 8 Modeling Hot-Carrier Effects; 9 Data Acquisition and Model Parameter Measurements; 10 Model Parameter Extraction Using Optimization Method; 11 SPICE Diode and MOSFET Models and Their Parameters; 12 Statistical Modeling and Worst-case Design Parameters; Appendix A. Important Properties of Silicon, Silicon Dioxide and Silicon Nitride at 300K.

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