The Source/Drain Engineering of Nanoscale Germanium-based MOS Devices

This book mainly focuses on reducing the high parasitic resistance in the source/drain of germanium nMOSFET. With adopting of the Implantation After Germanide (IAG) technique, P and Sb co-implantation technique and Multiple Implantation and Multiple Annealing (MIMA) technique, the electron Schottky...

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Bibliographic Details
Call Number:Libro Electrónico
Main Author: Li, Zhiqiang (Author)
Corporate Author: SpringerLink (Online service)
Format: Electronic eBook
Language:Inglés
Published: Berlin, Heidelberg : Springer Berlin Heidelberg : Imprint: Springer, 2016.
Edition:1st ed. 2016.
Series:Springer Theses, Recognizing Outstanding Ph.D. Research,
Subjects:
Semiconductors.
Electronic circuits.
Nanoscience.
Condensed matter.
Electronic Circuits and Systems.
Nanophysics.
Condensed Matter Physics.
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