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Fowler-Nordheim Field Emission Effects in Semiconductor Nanostructures /
This monograph solely presents the Fowler-Nordheim field emission (FNFE) from semiconductors and their nanostructures. The materials considered are quantum confined non-linear optical, III-V, II-VI, Ge, Te, carbon nanotubes, PtSb2, stressed materials, Bismuth, GaP, Gallium Antimonide, II-V, Bi2Te3,...
| Cote: | Libro Electrónico |
|---|---|
| Auteurs principaux: | , |
| Collectivité auteur: | |
| Format: | Électronique eBook |
| Langue: | Inglés |
| Publié: |
Berlin, Heidelberg :
Springer Berlin Heidelberg : Imprint: Springer,
2012.
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| Édition: | 1st ed. 2012. |
| Collection: | Springer Series in Solid-State Sciences,
170 |
| Sujets: | |
| Accès en ligne: | Texto Completo |
Table des matières:
- PART-I: FOWLER-NORDHEIM FIELD EMISSION FROM QUANTUM WIRES AND SUPERLATTICES OF NON-PARABOLIC MATERIALS
- Field emission from quantum wires of non-parabolic materials
- Field emission from quantum wire superlattices of non-parabolic materials
- Field emission from quantum confined materials under magnetic quantization
- Field emission from super lattices of non-parabolic materials under magnetic quantization
- PART-II: FOWLER-NORDHEIM FIELD EMISSION FROM QUANTUM CONFINED OPTOELECTRONIC MATERIALS IN THE PRESENCE OF LIGHT WAVES
- Field emission from quantum confined materials in the presence of light waves
- PART - III: FOWLER-NORDHEIM FIELD EMISSION FROM QUANTUM CONFINED OPTOELECTRONIC MATERIALS IN THE PRESENCE OF INTENCE ELECTRIC FIELD
- Field emission from quantum confined optoelectronic materials
- Applications and Brief Review of Experimental Results.