Fowler-Nordheim Field Emission Effects in Semiconductor Nanostructures /

This monograph solely presents the Fowler-Nordheim field emission (FNFE) from semiconductors and their nanostructures. The materials considered are quantum confined non-linear optical, III-V, II-VI, Ge, Te, carbon nanotubes, PtSb2, stressed materials, Bismuth, GaP, Gallium Antimonide, II-V, Bi2Te3,...

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Bibliographic Details
Call Number:Libro Electrónico
Main Authors: Bhattacharya, Sitangshu (Author), Ghatak, Kamakhya Prasad (Author)
Corporate Author: SpringerLink (Online service)
Format: Electronic eBook
Language:Inglés
Published: Berlin, Heidelberg : Springer Berlin Heidelberg : Imprint: Springer, 2012.
Edition:1st ed. 2012.
Series:Springer Series in Solid-State Sciences, 170
Subjects:
Semiconductors.
Optical materials.
Nanotechnology.
Nanoscience.
Telecommunication.
Optical Materials.
Nanophysics.
Microwaves, RF Engineering and Optical Communications.
Online Access:Texto Completo
Table of Contents:
  • PART-I: FOWLER-NORDHEIM FIELD EMISSION FROM QUANTUM WIRES AND SUPERLATTICES OF NON-PARABOLIC MATERIALS
  • Field emission from quantum wires of non-parabolic materials
  • Field emission from quantum wire superlattices of non-parabolic materials
  • Field emission from quantum confined materials under magnetic quantization
  • Field emission from super lattices of non-parabolic materials under magnetic quantization
  • PART-II: FOWLER-NORDHEIM FIELD EMISSION FROM QUANTUM CONFINED OPTOELECTRONIC MATERIALS IN THE PRESENCE OF LIGHT WAVES
  • Field emission from quantum confined materials in the presence of light waves
  • PART - III: FOWLER-NORDHEIM FIELD EMISSION FROM QUANTUM CONFINED OPTOELECTRONIC MATERIALS IN THE PRESENCE OF INTENCE ELECTRIC FIELD
  • Field emission from quantum confined optoelectronic materials
  • Applications and Brief Review of Experimental Results.

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