Silicon Quantum Integrated Circuits Silicon-Germanium Heterostructure Devices: Basics and Realisations /

Quantum size effects are becoming increasingly important in microelectronics as the dimensions of the structures shrinks laterally towards 100 nm and vertically towards 10 nm. Advanced device concepts will exploit these effects for integrated circuits with novel or improved properties. Keeping in mi...

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Bibliographic Details
Call Number:Libro Electrónico
Main Authors: Kasper, E. (Author), Paul, D.J (Author)
Corporate Author: SpringerLink (Online service)
Format: Electronic eBook
Language:Inglés
Published: Berlin, Heidelberg : Springer Berlin Heidelberg : Imprint: Springer, 2005.
Edition:1st ed. 2005.
Series:NanoScience and Technology,
Subjects:
Optical materials.
Lasers.
Electronic circuits.
Condensed matter.
Nanotechnology.
Electronics.
Optical Materials.
Laser.
Electronic Circuits and Systems.
Condensed Matter Physics.
Electronics and Microelectronics, Instrumentation.
Online Access:Texto Completo
Table of Contents:
  • Material Science
  • Resumé of Semiconductor Physics
  • Realisation of Potential Barriers
  • Electronic Device Principles
  • Heterostructure Bipolar Transistors - HBTs
  • Hetero Field Effect Transistors (HFETs)
  • Tunneling Phenomena
  • Optoelectronics
  • Integration
  • Outlook.

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