Vibrational Properties of Defective Oxides and 2D Nanolattices Insights from First-Principles Simulations /

Ge and III-V compounds, semiconductors with high carrier mobilities, are candidates to replace Si as the channel in MOS devices. 2D materials - like graphene and MoS_2 - are also envisioned to replace Si in the future.   This thesis is devoted to the first-principles modeling of the vibrational prop...

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Détails bibliographiques
Cote:Libro Electrónico
Auteur principal: Scalise, Emilio (Auteur)
Collectivité auteur: SpringerLink (Online service)
Format: Électronique eBook
Langue:Inglés
Publié: Cham : Springer International Publishing : Imprint: Springer, 2014.
Édition:1st ed. 2014.
Collection:Springer Theses, Recognizing Outstanding Ph.D. Research,
Sujets:
Semiconductors.
Optical materials.
Mathematical physics.
Electronic circuits.
Surfaces (Physics).
Optical Materials.
Theoretical, Mathematical and Computational Physics.
Electronic Circuits and Systems.
Surface and Interface and Thin Film.
Accès en ligne:Texto Completo
Table des matières:
  • Introduction
  • Theoretical Methods
  • First-Principles Modelling of Vibrational Modes in Defective Oxides
  • Vibrational Properties of Silicene and Germanene
  • Interaction of Silicene with Non-Metallic Layered Templates
  • Conclusions and Perspectives
  • Appendix for Experimental Techniques.

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