Vibrational Properties of Defective Oxides and 2D Nanolattices Insights from First-Principles Simulations /

Ge and III-V compounds, semiconductors with high carrier mobilities, are candidates to replace Si as the channel in MOS devices. 2D materials - like graphene and MoS_2 - are also envisioned to replace Si in the future.   This thesis is devoted to the first-principles modeling of the vibrational prop...

Full description

Bibliographic Details
Call Number:Libro Electrónico
Main Author: Scalise, Emilio (Author)
Corporate Author: SpringerLink (Online service)
Format: Electronic eBook
Language:Inglés
Published: Cham : Springer International Publishing : Imprint: Springer, 2014.
Edition:1st ed. 2014.
Series:Springer Theses, Recognizing Outstanding Ph.D. Research,
Subjects:
Semiconductors.
Optical materials.
Mathematical physics.
Electronic circuits.
Surfaces (Physics).
Optical Materials.
Theoretical, Mathematical and Computational Physics.
Electronic Circuits and Systems.
Surface and Interface and Thin Film.
Online Access:Texto Completo
Table of Contents:
  • Introduction
  • Theoretical Methods
  • First-Principles Modelling of Vibrational Modes in Defective Oxides
  • Vibrational Properties of Silicene and Germanene
  • Interaction of Silicene with Non-Metallic Layered Templates
  • Conclusions and Perspectives
  • Appendix for Experimental Techniques.

Similar Items