Roadmap for skutterudites and point defects in GaN /

Detalles Bibliográficos
Clasificación:Libro Electrónico
Otros Autores: Jagadish, C. (Chennupati) (Editor ), Mi, Zetian (Editor )
Formato: Electrónico eBook
Idioma:Inglés
Publicado: Amsterdam : Academic Press, 2022.
Colección:Semiconductors and semimetals ; v. 111.
Temas:
Gallium nitride.
Semiconductors.
Nitrure de gallium.
Semi-conducteurs.
semiconductor.
Gallium nitride
Semiconductors
Acceso en línea:Texto completo
Tabla de Contenidos:
  • Intro
  • Roadmap for Skutterudites and Point Defects in GaN
  • Copyright
  • Contents
  • Contributors
  • Preface
  • Chapter One: Roadmap for skutterudites: Prospective novel thermoelectrics
  • 1. Current and future challenges
  • 2. Advances in science and technology to meet challenges
  • 3. Concluding remarks
  • Acknowledgment
  • References
  • Chapter Two: Skutterudites: Prospective novel thermoelectrics
  • 1. Introduction
  • 2. Structural aspects and bonding
  • 2.1. Binary skutterudites
  • 2.2. Filled skutterudites
  • 3. Band structure
  • 4. Vibrational properties
  • 4.1. Phonon modes and the density of states
  • 4.2. Evidence of ``rattling��
  • 5. Sample preparation aspects
  • 6. Magnetic properties
  • 6.1. �Mssbauer spectroscopy
  • 6.2. Magnetic susceptibility
  • 7. Transport properties
  • 7.1. Electronic transport
  • 7.1.1. Binary skutterudites
  • 7.2. Thermal conductivity
  • 7.2.1. Binary skutterudites
  • 7.2.2. Effect of doping
  • 7.2.3. Solid solutions
  • 7.2.4. Ternary skutterudites
  • 7.2.5. Filled skutterudites
  • 8. Conclusions
  • Acknowledgments
  • References
  • Chapter Three: Roadmap for point defects in GaN
  • 1. Status
  • 1.1. Experiment
  • 1.2. Theory
  • 2. Current and future challenges
  • 3. Concluding remarks
  • References
  • Chapter Four: Point Defects in GaN
  • 1. Introduction
  • 2. Theoretical Predictions
  • 3. Growth Methods and SIMS Analysis
  • 4. Defects Revealed by PL
  • 4.1. Phenomenological model
  • 4.2. Configuration-coordinate model
  • 4.3. Main PL bands in GaN
  • 4.3.1. RL (1.81eV) band in undoped GaN
  • 4.3.2. RL2 (1.8eV) and GL2 (2.35eV) bands in Ga-rich, high-resistivity GaN
  • 4.3.3. YL (2.2eV) band in MOCVD and MBE GaN
  • 4.3.4. YL (2.1-2.2eV) and GL (2.4eV) bands in HVPE GaN
  • 4.3.5. BL (2.9eV) band in undoped and Zn-doped GaN
  • 4.3.6. BL2 (3.0eV) band in high-resistivity GaN
  • 4.3.7. UVL (3.27eV) band.
  • 5. Point Defects Revealed by DLTS and Other Capacitance Techniques
  • 5.1. Electron traps
  • 5.2. Hole traps
  • 5.2.1. Optical DLTS
  • 5.2.2. Photoionization spectra
  • 5.2.3. Identification of hole traps
  • 6. Vacancy-Related Defects Revealed by PAS
  • 7. Point Defects Revealed by Magnetic Resonance Techniques
  • 8. Summary
  • Acknowledgments
  • References
  • Index.

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