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SCIDIR_on1350928149 |
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OCoLC |
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20231120010711.0 |
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m o d |
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cr cnu---unuuu |
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221117s2022 ne o 001 0 eng d |
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|a OPELS
|b eng
|e rda
|e pn
|c OPELS
|d SFB
|d OCLCF
|d OCLCQ
|d OCLCO
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|z 9780323989336
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|z 0323989330
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|a (OCoLC)1350928149
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|a TK7871.15.G53
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|a 621.38152
|2 23
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|a Roadmap for skutterudites and point defects in GaN /
|c edited by Chennupati Jagadish, Zetian Mi.
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|a Amsterdam :
|b Academic Press,
|c 2022.
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| 300 |
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|a 1 online resource (1 volume)
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| 336 |
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|a text
|b txt
|2 rdacontent
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|a computer
|b c
|2 rdamedia
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| 338 |
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|a online resource
|b cr
|2 rdacarrier
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| 490 |
1 |
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|a Semiconductors and Semimetals ;
|v volume 111
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| 500 |
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|a Includes index.
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|a Print version record.
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|a Intro -- Roadmap for Skutterudites and Point Defects in GaN -- Copyright -- Contents -- Contributors -- Preface -- Chapter One: Roadmap for skutterudites: Prospective novel thermoelectrics -- 1. Current and future challenges -- 2. Advances in science and technology to meet challenges -- 3. Concluding remarks -- Acknowledgment -- References -- Chapter Two: Skutterudites: Prospective novel thermoelectrics -- 1. Introduction -- 2. Structural aspects and bonding -- 2.1. Binary skutterudites -- 2.2. Filled skutterudites -- 3. Band structure -- 4. Vibrational properties -- 4.1. Phonon modes and the density of states -- 4.2. Evidence of ``rattling�� -- 5. Sample preparation aspects -- 6. Magnetic properties -- 6.1. �Mssbauer spectroscopy -- 6.2. Magnetic susceptibility -- 7. Transport properties -- 7.1. Electronic transport -- 7.1.1. Binary skutterudites -- 7.2. Thermal conductivity -- 7.2.1. Binary skutterudites -- 7.2.2. Effect of doping -- 7.2.3. Solid solutions -- 7.2.4. Ternary skutterudites -- 7.2.5. Filled skutterudites -- 8. Conclusions -- Acknowledgments -- References -- Chapter Three: Roadmap for point defects in GaN -- 1. Status -- 1.1. Experiment -- 1.2. Theory -- 2. Current and future challenges -- 3. Concluding remarks -- References -- Chapter Four: Point Defects in GaN -- 1. Introduction -- 2. Theoretical Predictions -- 3. Growth Methods and SIMS Analysis -- 4. Defects Revealed by PL -- 4.1. Phenomenological model -- 4.2. Configuration-coordinate model -- 4.3. Main PL bands in GaN -- 4.3.1. RL (1.81eV) band in undoped GaN -- 4.3.2. RL2 (1.8eV) and GL2 (2.35eV) bands in Ga-rich, high-resistivity GaN -- 4.3.3. YL (2.2eV) band in MOCVD and MBE GaN -- 4.3.4. YL (2.1-2.2eV) and GL (2.4eV) bands in HVPE GaN -- 4.3.5. BL (2.9eV) band in undoped and Zn-doped GaN -- 4.3.6. BL2 (3.0eV) band in high-resistivity GaN -- 4.3.7. UVL (3.27eV) band.
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|a 5. Point Defects Revealed by DLTS and Other Capacitance Techniques -- 5.1. Electron traps -- 5.2. Hole traps -- 5.2.1. Optical DLTS -- 5.2.2. Photoionization spectra -- 5.2.3. Identification of hole traps -- 6. Vacancy-Related Defects Revealed by PAS -- 7. Point Defects Revealed by Magnetic Resonance Techniques -- 8. Summary -- Acknowledgments -- References -- Index.
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| 650 |
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|a Gallium nitride.
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| 650 |
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|a Semiconductors.
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| 650 |
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6 |
|a Nitrure de gallium.
|0 (CaQQLa)201-0286098
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| 650 |
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6 |
|a Semi-conducteurs.
|0 (CaQQLa)201-0318258
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| 650 |
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7 |
|a semiconductor.
|2 aat
|0 (CStmoGRI)aat300015117
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| 650 |
|
7 |
|a Gallium nitride
|2 fast
|0 (OCoLC)fst00937295
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| 650 |
|
7 |
|a Semiconductors
|2 fast
|0 (OCoLC)fst01112198
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| 700 |
1 |
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|a Jagadish, C.
|q (Chennupati),
|e editor.
|1 https://isni.org/isni/0000000116086150
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| 700 |
1 |
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|a Mi, Zetian,
|e editor.
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| 776 |
0 |
8 |
|i Print version:
|t Semiconductors and semimetals. Vol. 111.
|d Amsterdam : Academic Press, 2022
|z 9780323989336
|w (OCoLC)1346308991
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| 830 |
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0 |
|a Semiconductors and semimetals ;
|v v. 111.
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| 856 |
4 |
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|u https://sciencedirect.uam.elogim.com/science/bookseries/00808784/111
|z Texto completo
|
