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191130s2020 ne ob 001 0 eng d |
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|a EBLCP
|b eng
|e pn
|c EBLCP
|d OPELS
|d OCLCF
|d AU@
|d OCLCQ
|d COM
|d OCLCO
|d OCLCQ
|d OCLCO
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|a 1139742820
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|a 9780081021552
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|a 0081021550
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|z 9780081021545
|q (print)
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|a (OCoLC)1129181864
|z (OCoLC)1139742820
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|a TK7874.887
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|a 621.3
|2 23
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|a Spintronic 2D materials :
|b fundamentals and applications /
|c edited by Wenqing Liu and Yongbing Xu.
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|a Amsterdam, Netherlands :
|b Elsevier,
|c �2020.
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|a 1 online resource (322 pages)
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|a text
|b txt
|2 rdacontent
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|a computer
|b c
|2 rdamedia
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|a online resource
|b cr
|2 rdacarrier
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|a Materials Today
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|a Print version record.
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|a Front Cover; Spintronic 2D Materials; Copyright Page; Contents; List of contributors; Preface; 1 Introduction to spintronics and 2D materials; 1.1 Spin and spin ordering; 1.2 The discovery of giant magnetoresistance and tunnelling magnetoresistance; 1.3 Semiconductor spintronics: dilute magnetic semiconductor and spin field-effect transistor; 1.4 2D materials and magnetism in 2D materials; 1.5 Overview of this book; References; 2 Rashba spin-orbit coupling in two-dimensional systems; 2.1 The origin of Rashba spin-orbit coupling; 2.1.1 From Dirac to Pauli ... ; 2.1.2 ... and back again
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|a 2.1.3 Spin-splitting in semiconducting quantum wells2.1.4 Metallic surfaces; 2.1.5 Induced Rashba spin-orbit coupling; 2.1.6 Topological insulators; 2.1.7 Topological semimetals; 2.2 Fundamental signatures; 2.2.1 Energy dispersion and spin texture; 2.2.2 Electron dipole spin resonance; 2.2.3 Quantum oscillations; 2.2.4 Weak antilocalization; 2.3 Spin-orbit transport; 2.3.1 Spin-charge conversion effects; 2.3.2 Persistent spin helix; 2.3.3 Spin and charge pumping; 2.3.4 Zitterbewegung effect; 2.3.5 Quantum anomalous Hall and magnetoelectric effects
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|a 2.3.6 Floquet physics in spin-orbit coupled systems2.4 Rashba devices; 2.4.1 Aharonov-Casher interferometer; 2.4.2 Datta-Das spin field-effect transistor; 2.4.3 Spin-orbit torques devices; 2.4.4 Spin-orbit Qubits; 2.5 Outlook and conclusion; References; 3 Two-dimensional ferrovalley materials; 3.1 Valleytronics in 2D hexagonal lattices; 3.2 Valley polarization induced by external fields; 3.3 Ferrovalley materials with spontaneous valley polarization; 3.3.1 VSe2-Ferrovalley materials induced by ferromagnetism; 3.3.2 Bilayer VSe2-antiferrovalley materials
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|a 3.3.3 GeSe-Ferrovalley materials induced by ferroelectricity3.4 Summary and outlook; References; 4 Ferromagnetism in two-dimensional materials via doping and defect engineering; 4.1 Introduction; 4.2 Ferromagnetism in graphene; 4.3 Ferromagnetism in boron nitride; 4.4 Ferromagnetism in phosphorene; 4.5 Ferromagnetism of transition-metal dichalcogenide: MoS2; 4.6 Ferromagnetism in two-dimensional metal oxide: SnO; 4.7 Conclusion and prospective; References; 5 Charge-spin conversion in 2D systems; 5.1 Overview; 5.2 Introduction; 5.3 Spin generation; 5.3.1 Spin-polarized charge current
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|a 5.3.2 Spin injection into nonmagnetic materials5.3.3 Pure spin current; 5.4 Spin detection; 5.4.1 Spin accumulation voltage; 5.4.2 Inverse spin Hall effect; 5.4.3 Magnetoresistance; 5.5 Outlook; 5.5.1 New materials and heterostructures; 5.5.2 New techniques and characterizations; 5.5.3 New device architectures and functionalities; References; 6 Magnetic properties of graphene; 6.1 Significance of magnetic graphene; 6.2 Primary theory of magnetism of graphene-Lieb's theorem; 6.3 General methods for inducing localized magnetic moments in graphene; 6.3.1 Vacancy approach; 6.3.2 Edge approach
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|a 6.3.2.1 Graphene quantum dots
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|a Includes index.
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|a Includes bibliographical references and index.
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650 |
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|a Spintronics.
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650 |
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|a Materials.
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|a �Electronique de spin.
|0 (CaQQLa)201-0359169
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|a Mat�eriaux.
|0 (CaQQLa)201-0025866
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650 |
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|a Materials
|2 fast
|0 (OCoLC)fst01011772
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650 |
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|a Spintronics
|2 fast
|0 (OCoLC)fst01129994
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700 |
1 |
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|a Liu, Wenqing.
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700 |
1 |
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|a Xu, Yongbing.
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776 |
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|i Print version:
|a Xu, Yongbing.
|t Spintronic 2D Materials : Fundamentals and Applications.
|d San Diego : Elsevier, �2019
|z 9780081021545
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856 |
4 |
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|u https://sciencedirect.uam.elogim.com/science/book/9780081021545
|z Texto completo
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